PSST2016- Data used in paper on photoresist removal using an APPJ

Data for the publication "Fast, Downstream Removal of Photoresist Using Reactive Oxygen Species From The Effluent of An Atmospheric Pressure Plasma Jet".
The data consists of measurements of etch rates for different settings of the plasma jet, i.e. varying frequency, power and flow rate. Details on how the measurements are performed can be found in the paper. Furthermore, there is FTIR surface analysis data for Photoresist, Si wafer, ICP etched PR wafer, and APPJ etched PR wafer in arb units with respect to the wavenumber. Finally, Two-photon Absorption Laser Induced Fluorescence data at 3 mm from the plasma exit is obtained. The lifetime and total signal are recorded. The relative density is taken as signal/lifetime, then normalised to the maximum. This value is then multiplied by the flow rate in standard litres per minute to give a relative flux, and normalised.