Ieee electron device letters

ISSNs: 0741-3106

Institute of Electrical and Electronics Engineers Inc.

Scopus rating (2019): CiteScore 7.4 SJR 1.397 SNIP 1.633



  1. 2014
  2. 2008
  3. Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs

    Asenov, A., Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. & Ghibaudo, G., Aug 2008

    Article in Ieee electron device letters

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