Ieee electron device letters

ISSNs: 0741-3106

Institute of Electrical and Electronics Engineers Inc.

Scopus rating (2020): CiteScore 7.9 SJR 1.337 SNIP 1.582



  1. 2020
  2. Bi2O2Se/Au-based Schottky Phototransistor with Fast Response and Ultrahigh Responsivity

    Tong, T., Li, W., Qin, S., Yuan, X., Chen, Y., Zhang, C., Liu, W., Wang, P., Hu, W., Wang, F., Zhang, J., Zhang, R. & Xu, Y., 12 Aug 2020

    Article in Ieee electron device letters

  3. 2014
  4. 2008
  5. Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs

    Asenov, A., Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. & Ghibaudo, G., Aug 2008

    Article in Ieee electron device letters

Discover related content

Find related publications, people, projects, datasets and more using interactive charts.

View graph of relations