Semiconductor science and technology

ISSNs: 0268-1242

IOP Publishing Ltd.

Scopus rating (2019): CiteScore 4.3 SJR 0.79 SNIP 1.058

Journal

Publications

1 - 18 out of 18Page size: 25
RSS feed of this list
  1. 2020

  2. Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes

    Ryvkin, B. S., Avrutin, E. & Kostamovaara, J. T., 1 Jul 2020

    Article in Semiconductor science and technology

  3. 2018

  4. Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by strong doping of n-waveguides

    Avrutin, E., Ryvkin, B. & Kostamovaara, J. T., 26 Sep 2018

    Article in Semiconductor science and technology

  5. 2017

  6. Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

    Avrutin, E., Ryvkin, B. & Kostamovaara, J. T., 31 Oct 2017

    Article in Semiconductor science and technology

  7. Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching

    Ryvkin, B. S., Avrutin, E. A., Kostamovaara, J. E. K. & Kostamovaara, J. T., 19 Jan 2017

    Article in Semiconductor science and technology

  8. Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers

    Avrutin, E. A. & Ryvkin, B. S., 1 Jan 2017

    Article in Semiconductor science and technology

  9. 2015

  10. Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities

    Avrutin, E. A., Ryvkin, B. S., Payusov, A. S., Serin, A. A. & Gordeev, N. Y., 6 Oct 2015

    Article in Semiconductor science and technology

  11. Strongly asymmetric waveguide laser diodes for high brightness picosecond optical pulses generation by gain switching at GHz repetition rates

    Avrutin, E. A., Ryvkin, B. S., Kostamovaara, J. T. & Kuksenkov, D. V., 1 May 2015

    Article in Semiconductor science and technology

  12. 2012

  13. Electrical transport and depletion region in dry-etched Si-based nanostructures

    Cardile, P., Franzo, G., Krauss, T. F., Priolo, F. & O'Faolain, L., Apr 2012

    Article in Semiconductor science and technology

  14. 2011

  15. Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

    Ryvkin, B. S., Avrutin, E. A. & Kostamovaara, J. T., Apr 2011

    Article in Semiconductor science and technology

  16. 2009

  17. Use of the Franz-Keldysh effect in self-biased p-i-n-heterostructures for saturable absorber mirrors

    Ryvkin, B. S., Avrutin, E. A. & Panajotov, K., Feb 2009

    Article in Semiconductor science and technology

  18. 2004

  19. An interferometric spin-polarizing device

    Ionicioiu, R. & D'Amico, I., Apr 2004

    Article in Semiconductor science and technology

  20. High field and Coulomb interaction effects on spin injection in degenerate semiconductors

    D'Amico, I. & Vignale, G., Apr 2004

    Article in Semiconductor science and technology

  21. Optical read-out devices based on quantum dots with intrinsic bias

    D'Amico, I. & Rossi, F., Apr 2004

    Article in Semiconductor science and technology

  22. Ultrafast carrier and phonon dynamics in GaAs and GaN quantum dots

    Krummheuer, B., Vagov, A., Kuhn, T., Glanemann, M., Axt, V. M., D'Amico, I. & Rossi, F., Apr 2004

    Article in Semiconductor science and technology

  23. 1992

  24. Coupling of polar optical phonons to electrons in superlattices and isolated quantum wells

    BABIKER, M., Mar 1992

    Article in Semiconductor science and technology

  25. Fuchs-Kliewer interface polaritons and their interactions with electrons in GaAs/AlAs double heterostructures

    ALDOSSARY, O., BABIKER, M. & CONSTANTINOU, NC., Mar 1992

    Article in Semiconductor science and technology

  26. 1989

  27. Enhancement of energy relaxation rates at threshold well widths in quantum well structures

    CHAMBERLAIN, MP. & BABIKER, M., Aug 1989

    Letter in Semiconductor science and technology

  28. 1987

  29. Resonance effect in inter-sub-band transitions of single quantum wells

    BABIKER, M., CHAMBERLAIN, MP. & RIDLEY, BK., Sep 1987

    Article in Semiconductor science and technology

Discover related content

Find related publications, people, projects, datasets and more using interactive charts.

View graph of relations

York staff: edit these data