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Semiconductor science and technology
ISSNs: 0268-1242
IOP Publishing Ltd.
Scopus rating (2018): CiteScore 2.4 SJR 0.744 SNIP 1.002
Journal
Publications
- 2018
Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by strong doping of n-waveguides
Avrutin, E., Ryvkin, B. & Kostamovaara, J. T., 26 Sep 2018Article in Semiconductor science and technology
- 2017
Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range
Avrutin, E., Ryvkin, B. & Kostamovaara, J. T., 31 Oct 2017Article in Semiconductor science and technology
Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching
Ryvkin, B. S., Avrutin, E. A., Kostamovaara, J. E. K. & Kostamovaara, J. T., 19 Jan 2017Article in Semiconductor science and technology
- 2015
Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities
Avrutin, E. A., Ryvkin, B. S., Payusov, A. S., Serin, A. A. & Gordeev, N. Y., 6 Oct 2015Article in Semiconductor science and technology
Strongly asymmetric waveguide laser diodes for high brightness picosecond optical pulses generation by gain switching at GHz repetition rates
Avrutin, E. A., Ryvkin, B. S., Kostamovaara, J. T. & Kuksenkov, D. V., 1 May 2015Article in Semiconductor science and technology
- 2012
Electrical transport and depletion region in dry-etched Si-based nanostructures
Cardile, P., Franzo, G., Krauss, T. F., Priolo, F. & O'Faolain, L., Apr 2012Article in Semiconductor science and technology
- 2011
Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
Ryvkin, B. S., Avrutin, E. A. & Kostamovaara, J. T., Apr 2011Article in Semiconductor science and technology
- 2009
Use of the Franz-Keldysh effect in self-biased p-i-n-heterostructures for saturable absorber mirrors
Ryvkin, B. S., Avrutin, E. A. & Panajotov, K., Feb 2009Article in Semiconductor science and technology
- 2004
An interferometric spin-polarizing device
Ionicioiu, R. & D'Amico, I., Apr 2004Article in Semiconductor science and technology
High field and Coulomb interaction effects on spin injection in degenerate semiconductors
D'Amico, I. & Vignale, G., Apr 2004Article in Semiconductor science and technology
Optical read-out devices based on quantum dots with intrinsic bias
D'Amico, I. & Rossi, F., Apr 2004Article in Semiconductor science and technology
Ultrafast carrier and phonon dynamics in GaAs and GaN quantum dots
Krummheuer, B., Vagov, A., Kuhn, T., Glanemann, M., Axt, V. M., D'Amico, I. & Rossi, F., Apr 2004Article in Semiconductor science and technology
- 1992
Fuchs-Kliewer interface polaritons and their interactions with electrons in GaAs/AlAs double heterostructures
ALDOSSARY, O., BABIKER, M. & CONSTANTINOU, NC., Mar 1992Article in Semiconductor science and technology
- 1989
Enhancement of energy relaxation rates at threshold well widths in quantum well structures
CHAMBERLAIN, MP. & BABIKER, M., Aug 1989Letter in Semiconductor science and technology
- 1987
Resonance effect in inter-sub-band transitions of single quantum wells
BABIKER, M., CHAMBERLAIN, MP. & RIDLEY, BK., Sep 1987Article in Semiconductor science and technology
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