1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission

Hanlin Fang; Jin Liu; Hongji Li; Lidan Zhou; Lin Liu; Juntao Li; Xuehua Wang; Thomas F. Krauss; Yue Wang

doi:10.1002/lpor.201800015

1305 nm Few-Layer MoTe₂-on-Silicon Laser-Like Emission

Hanlin Fang, Jin Liu, Hongji Li, Lidan Zhou, Lin Liu, Juntao Li^*, Xuehua Wang, Thomas F. Krauss, Yue Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe₂) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe₂-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm². The surprising insight is that, contrary to common understanding, a monolayer MoTe₂ is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe₂ offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.

Original language	English
Article number	1800015
Number of pages	7
Journal	Laser and Photonics Reviews
Volume	12
Issue number	6
Early online date	11 May 2018
DOIs	https://doi.org/10.1002/lpor.201800015
Publication status	Published - 14 Jun 2018

Bibliographical note

©2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

Keywords

few-layer
molybdenum ditelluride
O-band
photonic crystal cavity
silicon lasers

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10.1002/lpor.201800015

1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission
©2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
Accepted author manuscript, 699 KB

Cite this

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title = "1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission",

abstract = "The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.",

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AU - Wang, Xuehua

AU - Krauss, Thomas F.

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1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission

Abstract

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Keywords

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Yue Wang

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1305 nm Few-Layer MoTe₂-on-Silicon Laser-Like Emission