Research output: Contribution to journal › Article › peer-review
1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission
699 KB, PDF document
Journal | Laser and Photonics Reviews |
---|---|
Date | Accepted/In press - 9 Apr 2018 |
Date | E-pub ahead of print - 11 May 2018 |
Date | Published (current) - 14 Jun 2018 |
Issue number | 6 |
Volume | 12 |
Number of pages | 7 |
Early online date | 11/05/18 |
Original language | English |
The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.
©2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
Find related publications, people, projects, datasets and more using interactive charts.