By the same authors

From the same journal

1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission

Research output: Contribution to journalArticle

Standard

1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission. / Fang, Hanlin; Liu, Jin; Li, Hongji; Zhou, Lidan; Liu, Lin; Li, Juntao; Wang, Xuehua; Krauss, Thomas F.; Wang, Yue.

In: Laser and Photonics Reviews, Vol. 12, No. 6, 1800015, 01.06.2018.

Research output: Contribution to journalArticle

Harvard

Fang, H, Liu, J, Li, H, Zhou, L, Liu, L, Li, J, Wang, X, Krauss, TF & Wang, Y 2018, '1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission', Laser and Photonics Reviews, vol. 12, no. 6, 1800015. https://doi.org/10.1002/lpor.201800015

APA

Fang, H., Liu, J., Li, H., Zhou, L., Liu, L., Li, J., ... Wang, Y. (2018). 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission. Laser and Photonics Reviews, 12(6), [1800015]. https://doi.org/10.1002/lpor.201800015

Vancouver

Fang H, Liu J, Li H, Zhou L, Liu L, Li J et al. 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission. Laser and Photonics Reviews. 2018 Jun 1;12(6). 1800015. https://doi.org/10.1002/lpor.201800015

Author

Fang, Hanlin ; Liu, Jin ; Li, Hongji ; Zhou, Lidan ; Liu, Lin ; Li, Juntao ; Wang, Xuehua ; Krauss, Thomas F. ; Wang, Yue. / 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission. In: Laser and Photonics Reviews. 2018 ; Vol. 12, No. 6.

Bibtex - Download

@article{6a81f64cc8364ebc9fb6e95ea5e6287f,
title = "1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission",
abstract = "The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.",
keywords = "few-layer, molybdenum ditelluride, O-band, photonic crystal cavity, silicon lasers",
author = "Hanlin Fang and Jin Liu and Hongji Li and Lidan Zhou and Lin Liu and Juntao Li and Xuehua Wang and Krauss, {Thomas F.} and Yue Wang",
note = "{\circledC}2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details",
year = "2018",
month = "6",
day = "1",
doi = "10.1002/lpor.201800015",
language = "English",
volume = "12",
journal = "Laser & Photonics Reviews",
issn = "1863-8880",
publisher = "Wiley-VCH Verlag",
number = "6",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission

AU - Fang, Hanlin

AU - Liu, Jin

AU - Li, Hongji

AU - Zhou, Lidan

AU - Liu, Lin

AU - Li, Juntao

AU - Wang, Xuehua

AU - Krauss, Thomas F.

AU - Wang, Yue

N1 - ©2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.

AB - The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.

KW - few-layer

KW - molybdenum ditelluride

KW - O-band

KW - photonic crystal cavity

KW - silicon lasers

UR - http://www.scopus.com/inward/record.url?scp=85046806484&partnerID=8YFLogxK

U2 - 10.1002/lpor.201800015

DO - 10.1002/lpor.201800015

M3 - Article

VL - 12

JO - Laser & Photonics Reviews

T2 - Laser & Photonics Reviews

JF - Laser & Photonics Reviews

SN - 1863-8880

IS - 6

M1 - 1800015

ER -