160 GHz harmonic mode-locked AlGaInAs 1.55 mu m strained quantum-well compound-cavity laser

Lianping Hou; Mohsin Haji; Rafal Dylewicz; Piotr Stolarz; Bocang Qiu; Eugene A. Avrutin; A. Catrina Bryce

160 GHz harmonic mode-locked AlGaInAs 1.55 mu m strained quantum-well compound-cavity laser

Lianping Hou, Mohsin Haji, Rafal Dylewicz, Piotr Stolarz, Bocang Qiu, Eugene A. Avrutin, A. Catrina Bryce

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 mu m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81. (C) 2010 Optical Society of America

Original language	English
Pages (from-to)	3991-3993
Number of pages	3
Journal	Optics Letters
Volume	35
Issue number	23
Publication status	Published - 1 Dec 2010

Keywords

SEMICONDUCTOR-LASER
OPTICAL PULSES
GENERATION
MODULATION
AMPLIFIERS
LOCKING
DIODES

Cite this

@article{49686312f8b4406ba27aeb44a4d1bc7a,

title = "160 GHz harmonic mode-locked AlGaInAs 1.55 mu m strained quantum-well compound-cavity laser",

abstract = "We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 mu m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81. (C) 2010 Optical Society of America",

keywords = "SEMICONDUCTOR-LASER, OPTICAL PULSES, GENERATION, MODULATION, AMPLIFIERS, LOCKING, DIODES",

author = "Lianping Hou and Mohsin Haji and Rafal Dylewicz and Piotr Stolarz and Bocang Qiu and Avrutin, {Eugene A.} and Bryce, {A. Catrina}",

year = "2010",

month = dec,

day = "1",

language = "English",

volume = "35",

pages = "3991--3993",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "The Optical Society",

number = "23",

}

TY - JOUR

T1 - 160 GHz harmonic mode-locked AlGaInAs 1.55 mu m strained quantum-well compound-cavity laser

AU - Hou, Lianping

AU - Haji, Mohsin

AU - Dylewicz, Rafal

AU - Stolarz, Piotr

AU - Qiu, Bocang

AU - Avrutin, Eugene A.

AU - Bryce, A. Catrina

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 mu m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81. (C) 2010 Optical Society of America

AB - We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 mu m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81. (C) 2010 Optical Society of America

KW - SEMICONDUCTOR-LASER

KW - OPTICAL PULSES

KW - GENERATION

KW - MODULATION

KW - AMPLIFIERS

KW - LOCKING

KW - DIODES

M3 - Article

VL - 35

SP - 3991

EP - 3993

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 23

ER -