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160 GHz harmonic mode-locked AlGaInAs 1.55 mu m strained quantum-well compound-cavity laser

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Author(s)

  • Lianping Hou
  • Mohsin Haji
  • Rafal Dylewicz
  • Piotr Stolarz
  • Bocang Qiu
  • Eugene A. Avrutin
  • A. Catrina Bryce

Department/unit(s)

Publication details

JournalOptics Letters
DatePublished - 1 Dec 2010
Issue number23
Volume35
Number of pages3
Pages (from-to)3991-3993
Original languageEnglish

Abstract

We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 mu m AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81. (C) 2010 Optical Society of America

    Research areas

  • SEMICONDUCTOR-LASER, OPTICAL PULSES, GENERATION, MODULATION, AMPLIFIERS, LOCKING, DIODES

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