TY - JOUR
T1 - 160 GHz Passively Mode-Locked AlGaInAs 1.55 um Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors
AU - Hou, Lianping
AU - Avrutin, Evgeny
AU - Haji, Mohsin
AU - Dylewicz, Rafal
AU - Bryce, Ann Catrina
AU - Marsh, John
PY - 2013/7
Y1 - 2013/7
N2 - We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic (M = 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.
AB - We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic (M = 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.
KW - ompound cavities, mode locked lasers, semiconductor lasers, ultrafast pulse generation.
U2 - 10.1109/JSTQE.2012.2230318
DO - 10.1109/JSTQE.2012.2230318
M3 - Article
SN - 1077-260X
VL - 19
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
IS - 4
M1 - 1100409
ER -