160 GHz Passively Mode-Locked AlGaInAs 1.55 um Strained Quantum-Well Lasers With Deeply Etched Intracavity Mirrors

Lianping Hou, Evgeny Avrutin, Mohsin Haji, Rafal Dylewicz, Ann Catrina Bryce, John Marsh

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We have characterized the reflectivity, modal discrimination, and passive mode locking performance of diode lasers with intracavity reflectors (ICR) composed of a different number of slots. Upon analysis, we demonstrate that a monolithic semiconductor mode-locked laser comprising a compound cavity formed by a single deeply etched ICR slot fabricated using the 1.55 μm AlGaInAs strained quantum-well material provides the best harmonic (M = 4) mode-locking performance, with Gaussian-pulses generated at a pulse repetition rate of 161.8 GHz and a pulse duration of 1.67 ps, providing a time-bandwidth product of 0.81.
Original languageEnglish
Article number1100409
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number4
Publication statusPublished - Jul 2013


  • ompound cavities, mode locked lasers, semiconductor lasers, ultrafast pulse generation.

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