Abstract
The experimental characterization of a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 mu m), with an asymmetric waveguide structure, a 100
m wide stripe, and a bulk active layer positioned very close to the p-cladding, is reported. An anti-reflection/high reflection coated laser with a stripe width of 100 um exhibits a single-facet output power over 25 W at a pumping current amplitude of 100 A.
m wide stripe, and a bulk active layer positioned very close to the p-cladding, is reported. An anti-reflection/high reflection coated laser with a stripe width of 100 um exhibits a single-facet output power over 25 W at a pumping current amplitude of 100 A.
| Original language | English |
|---|---|
| Pages (from-to) | 891-893 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 57 |
| Issue number | 23 |
| Early online date | 19 Aug 2021 |
| DOIs | |
| Publication status | Published - 4 Nov 2021 |
Bibliographical note
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