Abstract
A novel differential configuration of a high-resolution mode-localized resonant SOI-MEMS accelerometer is presented in this paper. An effective maximum scale factor of 11/g and a bias-stability of 2.96μg is demonstrated. A minimum noise floor of 3μg/√ Hz is shown for device operation in an optimum working region. A large bandwidth of 350Hz is reported and methods to electronically tune the working bandwidth are described. These results benchmark mode-localized accelerometers favourably with respect to other high-end low-g commercial MEMS accelerometers.
| Original language | English |
|---|---|
| Article number | 8796428 |
| Pages (from-to) | 782-789 |
| Number of pages | 8 |
| Journal | Journal of Microelectromechanical Systems |
| Volume | 28 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 13 Aug 2019 |
Bibliographical note
Funding Information:Manuscript received January 20, 2019; revised June 24, 2019; accepted June 27, 2019. Date of publication August 13, 2019; date of current version October 1, 2019. This work was supported in part by the Innovate UK and in part by the Natural Environment Research Council. Subject Editor M. Wong. (Corresponding author: Milind Pandit.) M. Pandit, C. Zhao, G. Sobreviela, and A. Seshia are with the Nanoscience Centre, Department of Engineering, University of Cambridge, Cambridge CB3 0FF, U.K. (e-mail: [email protected]).
Publisher Copyright:
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Keywords
- Accelerometer
- bandwidth
- bias stability
- common mode rejection
- mode localization
- noise floor