A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111)

T J Wood; C Bonet; T C Q Noakes; P Bailey; S P Tear

doi:10.1016/j.susc.2005.08.032

A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111)

T J Wood, C Bonet, T C Q Noakes, P Bailey, S P Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (111). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 +/- 0.03 A, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 +/- 0.02 A). Observing the effects of the top bilayer vibrations yields a model with significant enhancements. (c) 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	120-127
Number of pages	8
Journal	Surface Science
Volume	598
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2005.08.032
Publication status	Published - 20 Dec 2005

Keywords

medium energy ion scattering (MEIS)
ion-solid interactions,scattering,channeling
surface relaxation and reconstruction
surface structure,morphology,roughness, and topography
metal-semiconductor interfaces
silicon
silicides
yttrium
RARE-EARTH SILICIDES
ER SILICIDE
DYSPROSIUM GERMANIDE
ELECTRON DIFFRACTION
SCHOTTKY-BARRIER
OVERLAYERS
SI

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10.1016/j.susc.2005.08.032

Cite this

@article{99af3bf07e374b6a9fe7e2f5845700be,

title = "A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111)",

abstract = "Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (111). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 +/- 0.03 A, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 +/- 0.02 A). Observing the effects of the top bilayer vibrations yields a model with significant enhancements. (c) 2005 Elsevier B.V. All rights reserved.",

keywords = "medium energy ion scattering (MEIS), ion-solid interactions,scattering,channeling, surface relaxation and reconstruction, surface structure,morphology,roughness, and topography, metal-semiconductor interfaces, silicon, silicides, yttrium, RARE-EARTH SILICIDES, ER SILICIDE, DYSPROSIUM GERMANIDE, ELECTRON DIFFRACTION, SCHOTTKY-BARRIER, OVERLAYERS, SI",

author = "Wood, {T J} and C Bonet and Noakes, {T C Q} and P Bailey and Tear, {S P}",

year = "2005",

month = dec,

day = "20",

doi = "10.1016/j.susc.2005.08.032",

language = "English",

volume = "598",

pages = "120--127",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111)

AU - Wood, T J

AU - Bonet, C

AU - Noakes, T C Q

AU - Bailey, P

AU - Tear, S P

PY - 2005/12/20

Y1 - 2005/12/20

N2 - Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (111). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 +/- 0.03 A, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 +/- 0.02 A). Observing the effects of the top bilayer vibrations yields a model with significant enhancements. (c) 2005 Elsevier B.V. All rights reserved.

AB - Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (111). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 +/- 0.03 A, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 +/- 0.02 A). Observing the effects of the top bilayer vibrations yields a model with significant enhancements. (c) 2005 Elsevier B.V. All rights reserved.

KW - medium energy ion scattering (MEIS)

KW - ion-solid interactions,scattering,channeling

KW - surface relaxation and reconstruction

KW - surface structure,morphology,roughness, and topography

KW - metal-semiconductor interfaces

KW - silicon

KW - silicides

KW - yttrium

KW - RARE-EARTH SILICIDES

KW - ER SILICIDE

KW - DYSPROSIUM GERMANIDE

KW - ELECTRON DIFFRACTION

KW - SCHOTTKY-BARRIER

KW - OVERLAYERS

KW - SI

U2 - 10.1016/j.susc.2005.08.032

DO - 10.1016/j.susc.2005.08.032

M3 - Article

SN - 0039-6028

VL - 598

SP - 120

EP - 127

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -