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A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(111)

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JournalSurface Science
DatePublished - 20 Dec 2005
Issue number1-3
Volume598
Number of pages8
Pages (from-to)120-127
Original languageEnglish

Abstract

Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (111). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 +/- 0.03 A, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 +/- 0.02 A). Observing the effects of the top bilayer vibrations yields a model with significant enhancements. (c) 2005 Elsevier B.V. All rights reserved.

    Research areas

  • medium energy ion scattering (MEIS), ion-solid interactions,scattering,channeling, surface relaxation and reconstruction, surface structure,morphology,roughness, and topography, metal-semiconductor interfaces, silicon, silicides, yttrium, RARE-EARTH SILICIDES, ER SILICIDE, DYSPROSIUM GERMANIDE, ELECTRON DIFFRACTION, SCHOTTKY-BARRIER, OVERLAYERS, SI

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