A novel NiO-based p-i-n ultraviolet photodiode

Fahrettin Sarcan; Umit Doğan; Ahmad Althumali; Hari B. Vasili; Leonardo Lari; Adam Kerrigan; Furkan Kuruoğlu; Vlado K. Lazarov; Ayşe Erol

doi:10.1016/j.jallcom.2022.167806

A novel NiO-based p-i-n ultraviolet photodiode

Fahrettin Sarcan^*, Umit Doğan, Ahmad Althumali, Hari B. Vasili, Leonardo Lari, Adam Kerrigan, Furkan Kuruoğlu, Vlado K. Lazarov, Ayşe Erol

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7 % Nb-doped SrTiO₃ (001) substrate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, respectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.

Original language	English
Article number	167806
Number of pages	6
Journal	JOURNAL OF ALLOYS AND COMPOUNDS
Volume	934
Early online date	12 Nov 2022
DOIs	https://doi.org/10.1016/j.jallcom.2022.167806
Publication status	Published - 10 Feb 2023

Bibliographical note

Funding Information:
This work was supported in part by the Scientific Research Projects Coordination Unit of Istanbul University ( FAB-2021-37290 and FBG-2021-37896 ). We thank Diamond Light Source for access and support in the use of the electron Physical Science Imaging Centre (Instrument E01 and proposal number MG30474–1) that contributed to the results presented here.

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

Franz–Keldysh
N-type NiO
NiO
P-i-n junction
P-type NiO
Ultraviolet photodiode
Wide bandgap

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10.1016/j.jallcom.2022.167806

A Novel NiO-based p-i-n Ultraviolet Photodiode
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Cite this

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title = "A novel NiO-based p-i-n ultraviolet photodiode",

abstract = "In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7 % Nb-doped SrTiO3 (001) substrate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, respectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.",

keywords = "Franz–Keldysh, N-type NiO, NiO, P-i-n junction, P-type NiO, Ultraviolet photodiode, Wide bandgap",

author = "Fahrettin Sarcan and Umit Doğan and Ahmad Althumali and Vasili, {Hari B.} and Leonardo Lari and Adam Kerrigan and Furkan Kuruoğlu and Lazarov, {Vlado K.} and Ay{\c s}e Erol",

note = "Funding Information: This work was supported in part by the Scientific Research Projects Coordination Unit of Istanbul University ( FAB-2021-37290 and FBG-2021-37896 ). We thank Diamond Light Source for access and support in the use of the electron Physical Science Imaging Centre (Instrument E01 and proposal number MG30474–1) that contributed to the results presented here. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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AU - Sarcan, Fahrettin

AU - Doğan, Umit

AU - Althumali, Ahmad

AU - Vasili, Hari B.

AU - Lari, Leonardo

AU - Kerrigan, Adam

AU - Kuruoğlu, Furkan

AU - Lazarov, Vlado K.

AU - Erol, Ayşe

N1 - Funding Information: This work was supported in part by the Scientific Research Projects Coordination Unit of Istanbul University ( FAB-2021-37290 and FBG-2021-37896 ). We thank Diamond Light Source for access and support in the use of the electron Physical Science Imaging Centre (Instrument E01 and proposal number MG30474–1) that contributed to the results presented here. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2023/2/10

Y1 - 2023/2/10

N2 - In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7 % Nb-doped SrTiO3 (001) substrate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, respectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.

AB - In this study, the electrical and optical properties of a novel NiO-based homojunction p-i-n photodiode are reported. The p-i-n diode structure consists of Mg-doped, intrinsic and Cu-doped NiO from the top to the bottom layers, respectively. The photodiode structure was grown on a 0.7 % Nb-doped SrTiO3 (001) substrate using molecular beam epitaxy. The homojunction p-type NiO:Mg/i-NiO/n-type NiO:Cu exhibits diode characteristics. The ideality factor and barrier height of the diode are found to be 1.26 and 0.66 eV, respectively. The photoconductive properties of the photodiode were investigated by operating the diode under reverse bias, and spectral excitation of a Xe lamp. The responsivity of the photodiode is determined to be 295 mA/W at 3.9 eV. A constant photoresponse of the p-i-n photodiode between 3.75 eV and 6 eV with a responsivity of 250 mA/W is observed.

KW - Franz–Keldysh

KW - N-type NiO

KW - NiO

KW - P-i-n junction

KW - P-type NiO

KW - Ultraviolet photodiode

KW - Wide bandgap

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VL - 934

JO - JOURNAL OF ALLOYS AND COMPOUNDS

JF - JOURNAL OF ALLOYS AND COMPOUNDS

M1 - 167806

ER -

A novel NiO-based p-i-n ultraviolet photodiode

Abstract

Bibliographical note

Keywords

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