TY - JOUR
T1 - A numerical simulation for the stress effect in flexural micro/nano electromechanical resonators
AU - Yilmaz, Mustafa
AU - Esfahani, Mohammad Nasr
AU - Bicer, Mahmut
AU - Alaca, B. Erdem
PY - 2015/11/1
Y1 - 2015/11/1
N2 - Resonance frequencies and quality factors of micro/nano electromechanical resonators are known to differ significantly from target values in the presence of intrinsic stresses. This stress effect is modeled for a two-port system with electrostatic actuation and capacitive read-out. A methodology is proposed to compute equivalent electrical parameters for a double-clamped beam resonator under stress. The model is verified with finite element analysis, and a number of case studies are conducted in addition. Increase in resonance frequency with increasing intrinsic tensile stress is observed under mechanical and electrical effects, while a deterioration of quality factor is evident in cases with pronounced parasitic effects. Related challenges associated with the transition to the nanoscale are computationally captured. Finally, a short formulation is provided with relevant error margins for the direct estimation of equivalent circuit parameters. The proposed approach serves as a useful tool for layout design, where all involved dimensions are considered in addition to operational variables such as bias voltage and unloaded quality factor.
AB - Resonance frequencies and quality factors of micro/nano electromechanical resonators are known to differ significantly from target values in the presence of intrinsic stresses. This stress effect is modeled for a two-port system with electrostatic actuation and capacitive read-out. A methodology is proposed to compute equivalent electrical parameters for a double-clamped beam resonator under stress. The model is verified with finite element analysis, and a number of case studies are conducted in addition. Increase in resonance frequency with increasing intrinsic tensile stress is observed under mechanical and electrical effects, while a deterioration of quality factor is evident in cases with pronounced parasitic effects. Related challenges associated with the transition to the nanoscale are computationally captured. Finally, a short formulation is provided with relevant error margins for the direct estimation of equivalent circuit parameters. The proposed approach serves as a useful tool for layout design, where all involved dimensions are considered in addition to operational variables such as bias voltage and unloaded quality factor.
KW - Capacitive read-out
KW - Intrinsic stress
KW - Micro/nano electromechanical resonators
KW - Parasitic capacitance
UR - http://www.scopus.com/inward/record.url?scp=84964944571&partnerID=8YFLogxK
U2 - 10.1166/jctn.2015.4374
DO - 10.1166/jctn.2015.4374
M3 - Article
AN - SCOPUS:84964944571
SN - 1546-1955
VL - 12
SP - 4399
EP - 4407
JO - Journal of Computational and Theoretical Nanoscience
JF - Journal of Computational and Theoretical Nanoscience
IS - 11
ER -