Abstract
A Semiconductor Saturable Absorber Mirror utilising the electroabsorption effect in a self-biased stack of extremely shallow quantum wells or in a bulk semiconductor is proposed and analysed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favourably with existing all-optical constructions.
Original language | English |
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Pages (from-to) | U9970-U9970 |
Number of pages | 7 |
Journal | SECOND INTERNATION CONFERENCE ON IMAGE AND GRAPHICS, PTS 1 AND 2 |
Volume | 6997 |
Publication status | Published - 2008 |
Keywords
- mode locking
- saturable absorbers
- SESAM
- self-electrooptic effect devices
- EMITTING SEMICONDUCTOR-LASERS
- SATURABLE ABSORBER
- BISTABILITY
- ABSORPTION
- DEVICES