AlGaAs hot-electron optical modulator

B.S. Ryvkin; A.C. Walker; E.A. Avrutin

AlGaAs hot-electron optical modulator

B.S. Ryvkin, A.C. Walker, E.A. Avrutin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages < 1 V and switching times of units of picoseconds. (C) 2000 American Institute of Physics. [S0003-6951(00)04239-X].

Original language	English
Pages (from-to)	2060-2062
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	13
Publication status	Published - 25 Sept 2000

Keywords

ELECTROABSORPTION MODULATOR

Cite this

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title = "AlGaAs hot-electron optical modulator",

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T1 - AlGaAs hot-electron optical modulator

AU - Ryvkin, B.S.

AU - Walker, A.C.

AU - Avrutin, E.A.

PY - 2000/9/25

Y1 - 2000/9/25

N2 - We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages < 1 V and switching times of units of picoseconds. (C) 2000 American Institute of Physics. [S0003-6951(00)04239-X].

AB - We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages < 1 V and switching times of units of picoseconds. (C) 2000 American Institute of Physics. [S0003-6951(00)04239-X].

KW - ELECTROABSORPTION MODULATOR

M3 - Article

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VL - 77

SP - 2060

EP - 2062

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

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