AlGaAs hot-electron optical modulator

B.S. Ryvkin, A.C. Walker, E.A. Avrutin

Research output: Contribution to journalArticlepeer-review


We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages < 1 V and switching times of units of picoseconds. (C) 2000 American Institute of Physics. [S0003-6951(00)04239-X].

Original languageEnglish
Pages (from-to)2060-2062
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 25 Sept 2000



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