AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission

Evgeny Avrutin; boris ryvkin; Juha Tapio Kostamovaara

doi:10.1049/ote2.12033

AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission

Evgeny Avrutin, boris ryvkin, Juha Tapio Kostamovaara

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (< 0.9 m, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically << 100 ns. The dependences of the laser performance on the thickness of the active layer and the cavity length are analysed. It is shown that the relatively thick bulk active layer allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.

Original language	English
Number of pages	6
Journal	Iet optoelectronics
Volume	15
Issue number	2
Early online date	30 Mar 2021
DOIs	https://doi.org/10.1049/ote2.12033
Publication status	E-pub ahead of print - 30 Mar 2021

Bibliographical note

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10.1049/ote2.12033Licence: CC BY

ote2.12033
© 2021. The Author(s).
Final published version, 871 KBLicence: CC BY

Cite this

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title = "AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission",

abstract = "It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (< 0.9 m, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically << 100 ns. The dependences of the laser performance on the thickness of the active layer and the cavity length are analysed. It is shown that the relatively thick bulk active layer allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.",

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T1 - AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission

AU - Avrutin, Evgeny

AU - ryvkin, boris

AU - Kostamovaara, Juha Tapio

PY - 2021/3/30

Y1 - 2021/3/30

N2 - It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (< 0.9 m, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically << 100 ns. The dependences of the laser performance on the thickness of the active layer and the cavity length are analysed. It is shown that the relatively thick bulk active layer allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.

AB - It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (< 0.9 m, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically << 100 ns. The dependences of the laser performance on the thickness of the active layer and the cavity length are analysed. It is shown that the relatively thick bulk active layer allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.

U2 - 10.1049/ote2.12033

DO - 10.1049/ote2.12033

M3 - Article

SN - 1751-8768

VL - 15

JO - Iet optoelectronics

JF - Iet optoelectronics

IS - 2

ER -