Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

TY - JOUR

T1 - Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

AU - Rossall, Andrew K.

AU - van den Berg, Jaap A.

AU - Meehan, David

AU - Rajendiran, Sudha

AU - Wagenaars, Erik

N1 - © 2018 Elsevier B.V. All rights reserved. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.

AB - In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.

KW - Inductively coupled plasma

KW - Medium energy ion scattering

KW - Nano-layer profiling

KW - Plasma-enhanced pulsed laser deposition

KW - Thin film

KW - Transition metal oxide

UR - http://www.scopus.com/inward/record.url?scp=85049555353&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.06.023

DO - 10.1016/j.nimb.2018.06.023

M3 - Article

AN - SCOPUS:85049555353

SN - 0168-583X

VL - 450

SP - 274

EP - 278

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

ER -