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Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

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JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DateAccepted/In press - 25 Jun 2018
DateE-pub ahead of print - 7 Jul 2018
DatePublished (current) - 1 Jul 2019
Volume450
Number of pages5
Pages (from-to)274-278
Early online date7/07/18
Original languageEnglish

Abstract

In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.

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© 2018 Elsevier B.V. All rights reserved. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.

    Research areas

  • Inductively coupled plasma, Medium energy ion scattering, Nano-layer profiling, Plasma-enhanced pulsed laser deposition, Thin film, Transition metal oxide

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