Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy

Rafaela Moos, Igor Konieczniak, Graciely Elias dos Santos, Ângelo Luiz Gobbi, Ayrton André Bernussi, Wilson Carvalho Jr., Gilberto Medeiros-Ribeiro, Evaldo Ribeiro

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In this work we investigated the electronic states of InAsP/GaAs QDs using photoluminescence (PL) and photomodulated transmission (PT) experiments. PL measurements were performed as a function of temperature and excitation power. As the recombination energy of the InAsP/GaAs QDs resides in between the extremes InAs/GaAs and InP/GaAs QDs, these two materials were also analyzed. From PL experiments we could identify the recombination from the QDs ground state and the contribution of the InAsP and InP wetting layer (WL) with a macro PL technique. PL measurements of annealed samples allowed us to to clearly identify the WL electronic states. Specifically for the InP/GaAs QDs, the WL and QD recombination overlap as a single PL band. Photomodulated transmission spectroscopy (PT) showed spectral structure consistent with the QD and WL assignments given after the PL analysis.
Original languageEnglish
Article number0022-2313
Pages (from-to)639 - 644
Number of pages5
JournalJournal of luminescence
Issue number639-6'44
Early online date23 Oct 2018
Publication statusPublished - Feb 2019

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