Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy

Rafaela Moos; Igor Konieczniak; Graciely  Elias dos Santos; Ângelo Luiz Gobbi; Ayrton André Bernussi; Wilson Carvalho Jr.; Gilberto Medeiros-Ribeiro; Evaldo Ribeiro

doi:10.1016/j.jlumin.2018.10.085

Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy

Rafaela Moos, Igor Konieczniak, Graciely Elias dos Santos, Ângelo Luiz Gobbi, Ayrton André Bernussi, Wilson Carvalho Jr., Gilberto Medeiros-Ribeiro, Evaldo Ribeiro

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In this work we investigated the electronic states of InAsP/GaAs QDs using photoluminescence (PL) and photomodulated transmission (PT) experiments. PL measurements were performed as a function of temperature and excitation power. As the recombination energy of the InAsP/GaAs QDs resides in between the extremes InAs/GaAs and InP/GaAs QDs, these two materials were also analyzed. From PL experiments we could identify the recombination from the QDs ground state and the contribution of the InAsP and InP wetting layer (WL) with a macro PL technique. PL measurements of annealed samples allowed us to to clearly identify the WL electronic states. Specifically for the InP/GaAs QDs, the WL and QD recombination overlap as a single PL band. Photomodulated transmission spectroscopy (PT) showed spectral structure consistent with the QD and WL assignments given after the PL analysis.

Original language	English
Article number	0022-2313
Pages (from-to)	639 - 644
Number of pages	5
Journal	Journal of luminescence
Volume	206
Issue number	639-6'44
Early online date	23 Oct 2018
DOIs	https://doi.org/10.1016/j.jlumin.2018.10.085
Publication status	Published - Feb 2019

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Cite this

Moos, R., Konieczniak, I., Elias dos Santos, G., Gobbi, Â. L., Bernussi, A. A., Carvalho Jr., W., Medeiros-Ribeiro, G., & Ribeiro, E. (2019). Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy. Journal of luminescence, 206(639-6'44), 639 - 644. Article 0022-2313. https://doi.org/10.1016/j.jlumin.2018.10.085

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title = "Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy",

abstract = "In this work we investigated the electronic states of InAsP/GaAs QDs using photoluminescence (PL) and photomodulated transmission (PT) experiments. PL measurements were performed as a function of temperature and excitation power. As the recombination energy of the InAsP/GaAs QDs resides in between the extremes InAs/GaAs and InP/GaAs QDs, these two materials were also analyzed. From PL experiments we could identify the recombination from the QDs ground state and the contribution of the InAsP and InP wetting layer (WL) with a macro PL technique. PL measurements of annealed samples allowed us to to clearly identify the WL electronic states. Specifically for the InP/GaAs QDs, the WL and QD recombination overlap as a single PL band. Photomodulated transmission spectroscopy (PT) showed spectral structure consistent with the QD and WL assignments given after the PL analysis.",

author = "Rafaela Moos and Igor Konieczniak and {Elias dos Santos}, Graciely and Gobbi, {{\^A}ngelo Luiz} and Bernussi, {Ayrton Andr{\'e}} and {Carvalho Jr.}, Wilson and Gilberto Medeiros-Ribeiro and Evaldo Ribeiro",

year = "2019",

month = feb,

doi = "10.1016/j.jlumin.2018.10.085",

language = "English",

volume = "206",

pages = "639 -- 644",

journal = "Journal of luminescence",

issn = "0022-2313",

publisher = "Elsevier",

number = "639-6'44",

}

Moos, R, Konieczniak, I, Elias dos Santos, G, Gobbi, ÂL, Bernussi, AA, Carvalho Jr., W, Medeiros-Ribeiro, G & Ribeiro, E 2019, 'Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy', Journal of luminescence, vol. 206, no. 639-6'44, 0022-2313, pp. 639 - 644. https://doi.org/10.1016/j.jlumin.2018.10.085

TY - JOUR

T1 - Assessing electronic states of InAsP/GaAs self-assembled quantum dots by photoluminescence and modulation spectroscopy

AU - Moos, Rafaela

AU - Konieczniak, Igor

AU - Elias dos Santos, Graciely

AU - Gobbi, Ângelo Luiz

AU - Bernussi, Ayrton André

AU - Carvalho Jr., Wilson

AU - Medeiros-Ribeiro, Gilberto

AU - Ribeiro, Evaldo

PY - 2019/2

Y1 - 2019/2

N2 - In this work we investigated the electronic states of InAsP/GaAs QDs using photoluminescence (PL) and photomodulated transmission (PT) experiments. PL measurements were performed as a function of temperature and excitation power. As the recombination energy of the InAsP/GaAs QDs resides in between the extremes InAs/GaAs and InP/GaAs QDs, these two materials were also analyzed. From PL experiments we could identify the recombination from the QDs ground state and the contribution of the InAsP and InP wetting layer (WL) with a macro PL technique. PL measurements of annealed samples allowed us to to clearly identify the WL electronic states. Specifically for the InP/GaAs QDs, the WL and QD recombination overlap as a single PL band. Photomodulated transmission spectroscopy (PT) showed spectral structure consistent with the QD and WL assignments given after the PL analysis.

AB - In this work we investigated the electronic states of InAsP/GaAs QDs using photoluminescence (PL) and photomodulated transmission (PT) experiments. PL measurements were performed as a function of temperature and excitation power. As the recombination energy of the InAsP/GaAs QDs resides in between the extremes InAs/GaAs and InP/GaAs QDs, these two materials were also analyzed. From PL experiments we could identify the recombination from the QDs ground state and the contribution of the InAsP and InP wetting layer (WL) with a macro PL technique. PL measurements of annealed samples allowed us to to clearly identify the WL electronic states. Specifically for the InP/GaAs QDs, the WL and QD recombination overlap as a single PL band. Photomodulated transmission spectroscopy (PT) showed spectral structure consistent with the QD and WL assignments given after the PL analysis.

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DO - 10.1016/j.jlumin.2018.10.085

M3 - Article

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JO - Journal of luminescence

JF - Journal of luminescence

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