TY - JOUR
T1 - Asymmetric-Waveguide Laser Diode for High-Power Optical Pulse Generation by Gain Switching
AU - Ryvkin, Boris
AU - Avrutin, Eugene A.
AU - Kostamovaara, Juha Tapio
PY - 2009/6/15
Y1 - 2009/6/15
N2 - A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick (similar to 0.1 mu m) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.
AB - A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick (similar to 0.1 mu m) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.
KW - Optical pulse generation
KW - semiconductor lasers
KW - semiconductor waveguides
KW - SEMICONDUCTOR-LASERS
UR - http://www.scopus.com/inward/record.url?scp=67649843991&partnerID=8YFLogxK
U2 - 10.1109/JLT.2008.2009075
DO - 10.1109/JLT.2008.2009075
M3 - Article
VL - 27
SP - 2125
EP - 2131
JO - Journal of lightwave technology
JF - Journal of lightwave technology
SN - 0733-8724
IS - 12
ER -