Asymmetric-Waveguide Laser Diode for High-Power Optical Pulse Generation by Gain Switching

Boris Ryvkin, Eugene A. Avrutin, Juha Tapio Kostamovaara

Research output: Contribution to journalArticlepeer-review


A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick (similar to 0.1 mu m) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.

Original languageEnglish
Pages (from-to)2125-2131
Number of pages7
JournalJournal of lightwave technology
Issue number12
Publication statusPublished - 15 Jun 2009


  • Optical pulse generation
  • semiconductor lasers
  • semiconductor waveguides

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