Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

TY - JOUR

T1 - Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

AU - Ghasemi, A

AU - Kepaptsoglou, D

AU - Collins-McIntyre, L J

AU - Ramasse, Q

AU - Hesjedal, T

AU - Lazarov, V K

PY - 2016/5/25

Y1 - 2016/5/25

N2 - We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.

AB - We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film.

U2 - 10.1038/srep26549

DO - 10.1038/srep26549

M3 - Article

C2 - 27221782

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 26549

ER -