Atomic-Scale Spectroscopic Imaging of the Extreme-UV Optical Response of B- and N-Doped Graphene

Fredrik S. Hage; Myron D. Kapetanakis; Juan-Carlos Idrobo; Quentin M. Ramasse; Demie Kepaptsoglou

doi:10.1002/adfm.201901819

Atomic-Scale Spectroscopic Imaging of the Extreme-UV Optical Response of B- and N-Doped Graphene

Fredrik S. Hage, Myron D. Kapetanakis, Juan-Carlos Idrobo, Quentin M. Ramasse, Demie Kepaptsoglou

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract Substitutional doping of graphene by impurity atoms such as boron and nitrogen, followed by atom-by-atom manipulation via scanning transmission electron microscopy, can allow for accurate tailoring of its electronic structure, plasmonic response, and even the creation of single atom devices. Beyond the identification of individual dopant atoms by means of ?Z contrast? imaging, spectroscopic characterization is needed to understand the modifications induced in the electronic structure and plasmonic response. Here, atomic scale spectroscopic imaging in the extreme UV-frequency band is demonstrated. Characteristic and energy-loss-dependent contrast changes centered on individual dopant atoms are highlighted. These effects are attributed to local dopant-induced modifications of the electronic structure and are shown to be in excellent agreement with calculations of the associated densities of states.

Original language	English
Article number	1901819
Pages (from-to)	1-6
Number of pages	6
Journal	ADVANCED FUNCTIONAL MATERIALS
Volume	0
Issue number	0
DOIs	https://doi.org/10.1002/adfm.201901819
Publication status	Published - 22 May 2019

Bibliographical note

© 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

Keywords

density functional theory
doping
electron energy loss spectroscopy
graphene
scanning transmission electron microscopy

Access to Document

10.1002/adfm.201901819

2019_05_23_revised_submission_final
© 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.
Accepted author manuscript, 1.44 MBLicence: Unspecified

Cite this

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title = "Atomic-Scale Spectroscopic Imaging of the Extreme-UV Optical Response of B- and N-Doped Graphene",

abstract = "Abstract Substitutional doping of graphene by impurity atoms such as boron and nitrogen, followed by atom-by-atom manipulation via scanning transmission electron microscopy, can allow for accurate tailoring of its electronic structure, plasmonic response, and even the creation of single atom devices. Beyond the identification of individual dopant atoms by means of ?Z contrast? imaging, spectroscopic characterization is needed to understand the modifications induced in the electronic structure and plasmonic response. Here, atomic scale spectroscopic imaging in the extreme UV-frequency band is demonstrated. Characteristic and energy-loss-dependent contrast changes centered on individual dopant atoms are highlighted. These effects are attributed to local dopant-induced modifications of the electronic structure and are shown to be in excellent agreement with calculations of the associated densities of states.",

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AU - Hage, Fredrik S.

AU - Kapetanakis, Myron D.

AU - Idrobo, Juan-Carlos

AU - Ramasse, Quentin M.

AU - Kepaptsoglou, Demie

N1 - © 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

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N2 - Abstract Substitutional doping of graphene by impurity atoms such as boron and nitrogen, followed by atom-by-atom manipulation via scanning transmission electron microscopy, can allow for accurate tailoring of its electronic structure, plasmonic response, and even the creation of single atom devices. Beyond the identification of individual dopant atoms by means of ?Z contrast? imaging, spectroscopic characterization is needed to understand the modifications induced in the electronic structure and plasmonic response. Here, atomic scale spectroscopic imaging in the extreme UV-frequency band is demonstrated. Characteristic and energy-loss-dependent contrast changes centered on individual dopant atoms are highlighted. These effects are attributed to local dopant-induced modifications of the electronic structure and are shown to be in excellent agreement with calculations of the associated densities of states.

AB - Abstract Substitutional doping of graphene by impurity atoms such as boron and nitrogen, followed by atom-by-atom manipulation via scanning transmission electron microscopy, can allow for accurate tailoring of its electronic structure, plasmonic response, and even the creation of single atom devices. Beyond the identification of individual dopant atoms by means of ?Z contrast? imaging, spectroscopic characterization is needed to understand the modifications induced in the electronic structure and plasmonic response. Here, atomic scale spectroscopic imaging in the extreme UV-frequency band is demonstrated. Characteristic and energy-loss-dependent contrast changes centered on individual dopant atoms are highlighted. These effects are attributed to local dopant-induced modifications of the electronic structure and are shown to be in excellent agreement with calculations of the associated densities of states.

KW - density functional theory

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KW - electron energy loss spectroscopy

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KW - scanning transmission electron microscopy

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