The spin transfer torque(STT) based MRAM device has been seen as the next general storage device which can realize the non-volatile storage and in-memory computing. However, the shape defect comes from the fabrication process will influence the performance of the MRAM device. In this work, the relationship of the critical current and switching time and the interface edge defect in a CoFeB MRAM is studied by the atomistic spin model. The atomistic simulations that the effect of the interface edge defect depends on the thickness of the magnetic layer, the operating temperature and the driven current density. Our finding should also benefit the control of the fabrication process of the spin transfer torque based technologies.
Bibliographical notePublisher Copyright:
- Atomistic simulation