Atomistic Investigation of Interface Edge Defect in CoFeB/MgO Ferromagnetic Nano-Dots

TY - JOUR

T1 - Atomistic Investigation of Interface Edge Defect in CoFeB/MgO Ferromagnetic Nano-Dots

AU - Wang, Junlin

AU - Li, Guanqi

AU - Zhang, Bosen

AU - Zhang, Kunpeng

AU - Tong, Kaiyu

AU - Liu, Bo

AU - Meng, Hao

AU - Wu, Jing

AU - Xu, Yongbing

N1 - Publisher Copyright: IEEE

PY - 2023/2/1

Y1 - 2023/2/1

N2 - The spin transfer torque(STT) based MRAM device has been seen as the next general storage device which can realize the non-volatile storage and in-memory computing. However, the shape defect comes from the fabrication process will influence the performance of the MRAM device. In this work, the relationship of the critical current and switching time and the interface edge defect in a CoFeB MRAM is studied by the atomistic spin model. The atomistic simulations that the effect of the interface edge defect depends on the thickness of the magnetic layer, the operating temperature and the driven current density. Our finding should also benefit the control of the fabrication process of the spin transfer torque based technologies.

AB - The spin transfer torque(STT) based MRAM device has been seen as the next general storage device which can realize the non-volatile storage and in-memory computing. However, the shape defect comes from the fabrication process will influence the performance of the MRAM device. In this work, the relationship of the critical current and switching time and the interface edge defect in a CoFeB MRAM is studied by the atomistic spin model. The atomistic simulations that the effect of the interface edge defect depends on the thickness of the magnetic layer, the operating temperature and the driven current density. Our finding should also benefit the control of the fabrication process of the spin transfer torque based technologies.

KW - Atomistic simulation

KW - MRAM

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=85141484038&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2022.3218138

DO - 10.1109/TMAG.2022.3218138

M3 - Article

AN - SCOPUS:85141484038

SN - 0018-9464

VL - 59

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 2

M1 - 3000104

ER -