BODIPY-thiophene copolymers as p-channel semiconductors for organic thin-film transistors

Hakan Usta; M Deniz Yilmaz; Alyssa-Jennifer Avestro; Damien Boudinet; Mitchell Denti; Wei Zhao; J Fraser Stoddart; Antonio Facchetti

doi:10.1002/adma.201300318

BODIPY-thiophene copolymers as p-channel semiconductors for organic thin-film transistors

Hakan Usta, M Deniz Yilmaz, Alyssa-Jennifer Avestro, Damien Boudinet, Mitchell Denti, Wei Zhao, J Fraser Stoddart, Antonio Facchetti

Research output: Contribution to journal › Article › peer-review

Abstract

The synthesis and physicochemical properties of a new class of BODIPY-based donor-acceptor π-conjugated polymers are presented. Solution-processed top-gate/bottom-contact (TG-BC) thin-film transistors on flexible plastic substrates exhibit air-stable p-channel activities with charge carrier mobilities as high as 0.17 cm(2) /V·s and current on/off ratios of 10(5) -10(6) , the highest reported to date for a BODIPY-based semiconductor. The results shown here indicate a significant charge-transport improvement (>10000×) in BODIPY-based polymeric semiconductors, demonstrating its potential in future organic optoelectronic applications.

Original language	English
Pages (from-to)	4327-34
Number of pages	8
Journal	Advanced Materials
Volume	25
Issue number	31
DOIs	https://doi.org/10.1002/adma.201300318
Publication status	Published - 21 Aug 2013

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10.1002/adma.201300318

Cite this

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title = "BODIPY-thiophene copolymers as p-channel semiconductors for organic thin-film transistors",

abstract = "The synthesis and physicochemical properties of a new class of BODIPY-based donor-acceptor π-conjugated polymers are presented. Solution-processed top-gate/bottom-contact (TG-BC) thin-film transistors on flexible plastic substrates exhibit air-stable p-channel activities with charge carrier mobilities as high as 0.17 cm(2) /V·s and current on/off ratios of 10(5) -10(6) , the highest reported to date for a BODIPY-based semiconductor. The results shown here indicate a significant charge-transport improvement (>10000×) in BODIPY-based polymeric semiconductors, demonstrating its potential in future organic optoelectronic applications.",

author = "Hakan Usta and Yilmaz, {M Deniz} and Alyssa-Jennifer Avestro and Damien Boudinet and Mitchell Denti and Wei Zhao and Stoddart, {J Fraser} and Antonio Facchetti",

note = "Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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doi = "10.1002/adma.201300318",

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AU - Usta, Hakan

AU - Yilmaz, M Deniz

AU - Avestro, Alyssa-Jennifer

AU - Boudinet, Damien

AU - Denti, Mitchell

AU - Zhao, Wei

AU - Stoddart, J Fraser

AU - Facchetti, Antonio

PY - 2013/8/21

Y1 - 2013/8/21

N2 - The synthesis and physicochemical properties of a new class of BODIPY-based donor-acceptor π-conjugated polymers are presented. Solution-processed top-gate/bottom-contact (TG-BC) thin-film transistors on flexible plastic substrates exhibit air-stable p-channel activities with charge carrier mobilities as high as 0.17 cm(2) /V·s and current on/off ratios of 10(5) -10(6) , the highest reported to date for a BODIPY-based semiconductor. The results shown here indicate a significant charge-transport improvement (>10000×) in BODIPY-based polymeric semiconductors, demonstrating its potential in future organic optoelectronic applications.

AB - The synthesis and physicochemical properties of a new class of BODIPY-based donor-acceptor π-conjugated polymers are presented. Solution-processed top-gate/bottom-contact (TG-BC) thin-film transistors on flexible plastic substrates exhibit air-stable p-channel activities with charge carrier mobilities as high as 0.17 cm(2) /V·s and current on/off ratios of 10(5) -10(6) , the highest reported to date for a BODIPY-based semiconductor. The results shown here indicate a significant charge-transport improvement (>10000×) in BODIPY-based polymeric semiconductors, demonstrating its potential in future organic optoelectronic applications.

U2 - 10.1002/adma.201300318

DO - 10.1002/adma.201300318

M3 - Article

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VL - 25

SP - 4327

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JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 31

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