Broad-waveguide passively mode-locked laser diodes for stable short pulse generation - art. no. 699720

E. A. Avrutin; B. S. Ryvkin; E. L. Portnoi

Broad-waveguide passively mode-locked laser diodes for stable short pulse generation - art. no. 699720

E. A. Avrutin, B. S. Ryvkin, E. L. Portnoi

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown theoretically that broadening the optical confinement layer in monolithic mode-locked semiconductor lasers may suppress Q-switching instability, by increasing the carrier transport time, and lead to emission of shorter, more stable optical pulses.

Original language	English
Pages (from-to)	99720-99720
Number of pages	10
Journal	SECOND INTERNATION CONFERENCE ON IMAGE AND GRAPHICS, PTS 1 AND 2
Volume	6997
Publication status	Published - 2008

Keywords

mode-locked lasers
instabilities
stabilization techniques
SEMICONDUCTOR-LASERS

Cite this

@article{65aa011fad404cd086302affb4599ac5,

title = "Broad-waveguide passively mode-locked laser diodes for stable short pulse generation - art. no. 699720",

abstract = "It is shown theoretically that broadening the optical confinement layer in monolithic mode-locked semiconductor lasers may suppress Q-switching instability, by increasing the carrier transport time, and lead to emission of shorter, more stable optical pulses.",

keywords = "mode-locked lasers, instabilities, stabilization techniques, SEMICONDUCTOR-LASERS",

author = "Avrutin, {E. A.} and Ryvkin, {B. S.} and Portnoi, {E. L.}",

year = "2008",

language = "English",

volume = "6997",

pages = "99720--99720",

journal = "SECOND INTERNATION CONFERENCE ON IMAGE AND GRAPHICS, PTS 1 AND 2",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Broad-waveguide passively mode-locked laser diodes for stable short pulse generation - art. no. 699720

AU - Avrutin, E. A.

AU - Ryvkin, B. S.

AU - Portnoi, E. L.

PY - 2008

Y1 - 2008

N2 - It is shown theoretically that broadening the optical confinement layer in monolithic mode-locked semiconductor lasers may suppress Q-switching instability, by increasing the carrier transport time, and lead to emission of shorter, more stable optical pulses.

AB - It is shown theoretically that broadening the optical confinement layer in monolithic mode-locked semiconductor lasers may suppress Q-switching instability, by increasing the carrier transport time, and lead to emission of shorter, more stable optical pulses.

KW - mode-locked lasers

KW - instabilities

KW - stabilization techniques

KW - SEMICONDUCTOR-LASERS

M3 - Article

SN - 0277-786X

VL - 6997

SP - 99720

EP - 99720

JO - SECOND INTERNATION CONFERENCE ON IMAGE AND GRAPHICS, PTS 1 AND 2

JF - SECOND INTERNATION CONFERENCE ON IMAGE AND GRAPHICS, PTS 1 AND 2

ER -