Carrier accumulation in the optical confinement layer, its effect on power limit in high power and brightness laser diodes, and laser design to overcome this limitation

Eugene Avrutin*, Boris Ryvkin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We analyse efficiency degradation due to carrier accumulation in the optical confinement layer of high-power laser diodes. Narrow asymmetric waveguide structures are shown to reduce this limitation while enabling low built-in losses and fundamental-mode operation.

Original languageEnglish
Title of host publication2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012
Pages53-54
Number of pages2
DOIs
Publication statusPublished - 2012
Event2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012 - Seattle, WA, United States
Duration: 9 Jul 201211 Jul 2012

Conference

Conference2012 IEEE Photonics Society Summer Topical Meeting Series, PSST 2012
Country/TerritoryUnited States
CitySeattle, WA
Period9/07/1211/07/12

Keywords

  • asymmetric structures
  • efficiency
  • far field
  • High-power lasers
  • modelling

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