Characterization of composition dependence of properties of a MgNiO-based MSM structure

Ümit Doğan, Fahrettin Sarcan*, Elanur Hut, Barat Achinuq, Ahmad Althumali, Ibrahim Aldawood, Adam Kerrigan, Vlado K. Lazarov, Ayşe Erol

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, the effect of Mg composition on structural and optical properties of MgxNi1-xO alloy thin film single crystal semiconductors as well as their implementation into Metal-Semiconductor-Metal (MSM) photodetector are studied. An 850 meV blue-shift of the bandgap is observed from 3.65 eV to 4.50 eV with increasing Mg composition from 0% to 67%. The deep ultraviolet/visible rejection ratio, which is the ratio of photosensitivity at a peak wavelength of 360 nm to that at 450 nm is found to be ∼58 for Mg composition of 67%. Mg rich (%67 Mg) alloy-based photodetector is found to have two orders smaller dark current and have higher spectral response compared to NiO-based one. Spectral responsivities for MgxNi1-xO photodetectors are determined as 415 mA W−1, 80 mA W−1, and 5.6 mA W−1 for Mg compositions of 67%, 21%, and 0% (reference-NiO), respectively. Furthermore, the detectivity of the photodetectors enhances as Mg composition increases and the highest detectivity of a magnitude of ∼1011 Jones is found for the photodetector with Mg composition of 67%.

Original languageEnglish
Article number095974
JournalPhysica Scripta
Volume99
Issue number9
Early online date22 Aug 2024
DOIs
Publication statusPublished - 1 Sept 2024

Bibliographical note

© 2024 The Author(s)

Keywords

  • MBE
  • metal-semiconductor-metal
  • MgNiO
  • MSM
  • photoconductivity
  • photodetector
  • UV

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