Abstract
In this study, the effect of Mg composition on structural and optical properties of MgxNi1-xO alloy thin film single crystal semiconductors as well as their implementation into Metal-Semiconductor-Metal (MSM) photodetector are studied. An 850 meV blue-shift of the bandgap is observed from 3.65 eV to 4.50 eV with increasing Mg composition from 0% to 67%. The deep ultraviolet/visible rejection ratio, which is the ratio of photosensitivity at a peak wavelength of 360 nm to that at 450 nm is found to be ∼58 for Mg composition of 67%. Mg rich (%67 Mg) alloy-based photodetector is found to have two orders smaller dark current and have higher spectral response compared to NiO-based one. Spectral responsivities for MgxNi1-xO photodetectors are determined as 415 mA W−1, 80 mA W−1, and 5.6 mA W−1 for Mg compositions of 67%, 21%, and 0% (reference-NiO), respectively. Furthermore, the detectivity of the photodetectors enhances as Mg composition increases and the highest detectivity of a magnitude of ∼1011 Jones is found for the photodetector with Mg composition of 67%.
Original language | English |
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Article number | 095974 |
Journal | Physica Scripta |
Volume | 99 |
Issue number | 9 |
Early online date | 22 Aug 2024 |
DOIs | |
Publication status | Published - 1 Sept 2024 |
Bibliographical note
© 2024 The Author(s)Keywords
- MBE
- metal-semiconductor-metal
- MgNiO
- MSM
- photoconductivity
- photodetector
- UV