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Characterizing ferromagnetic oxide/organic semiconductor interfaces using a spin-polarized metastable helium beam

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Publication details

JournalJournal of the Magnetics Society of Japan
DateE-pub ahead of print - 19 Feb 2014
DatePublished (current) - 20 Mar 2014
Issue number2-2
Number of pages4
Pages (from-to)71-74
Early online date19/02/14
Original languageEnglish


Here we give an overview of how a spin-polarized metastable helium beam may be used to characterize surfaces and interfaces relevant to spin injection from a ferromagnetic (FM) electrode to an organic semiconductor (OSC). Taking advantage of the extreme surface sensitivity of this technique, we show how information regarding the electronic and magnetic properties of FM/OSC interfaces may be obtained. We demonstrate how the spin polarization at the surface of a FM oxide―Fe3O4(001)―may be drastically enhanced through atomic adsorption. We also investigate the adsorption of copper phthalocyanine (CuPc) on Fe3O4(001) revealing that the CuPc molecular orbitals are spin polarized due to the magnetic interaction with the substrate, even for a relatively thick film of 5 nm.

    Research areas

  • Spin polarization, Molecular spintronics, Organic semiconductors, Fe3O4, Copper phthalocyanine, Spin-polarized metastable helium

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