Charge density of semiconductors in the GW approximation

M M Rieger, R W Godby

Research output: Contribution to journalArticlepeer-review

Abstract

We present a method to calculate the electronic charge density of periodic solids in the GW approximation, using the space-time approach. We investigate, for the examples of silicon and germanium, to what extent the GW approximation is charge conserving and how the charge density compares with experimental values. We find that the GW charge density is close to experiment and charge is practically conserved. We also discuss how using a Hartree potential consistent with the level of approximation affects the quasiparticle energies and find that the common simplification of using the local-density approximation Hartree potential is very well justified. [S0163-1829(98)03427-4].

Original languageEnglish
Pages (from-to)1343-1348
Number of pages6
JournalPhysical Review B
Volume58
Issue number3
Publication statusPublished - 15 Jul 1998

Keywords

  • PARTICLE BAND-STRUCTURE
  • GERMANIUM
  • SILICON
  • GAAS
  • SI
  • GE

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