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From the same journal

Chemical bevelling of InP-based structures by HBr-H3PO4-K2Cr2O7 solution

Research output: Contribution to journalLetter



Publication details

JournalJournal of Crystal Growth
DatePublished - Aug 1997
Issue number1-2
Number of pages4
Pages (from-to)320-323
Original languageEnglish


By using HBr-H3PO4-K2Cr2O7 solution, bevels through InP-based structures were prepared. On InP/InGaAsP structure the bevel angles in the range 3 x 10(-5) to 2 x 10(-4) rad were obtained with good linearity of the bevel profile. The dependence of bevel angle on the etchant flow speed was measured and discussed.

    Research areas

  • chemical etching, bevel, InP, InGaAs, InGaAsP, InGaAlAs, AUGER ANALYSIS

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