By the same authors

From the same journal

From the same journal

Chemical bevelling of InP-based structures by HBr-H3PO4-K2Cr2O7 solution

Research output: Contribution to journalLetter

Author(s)

Department/unit(s)

Publication details

JournalJournal of Crystal Growth
DatePublished - Aug 1997
Issue number1-2
Volume179
Number of pages4
Pages (from-to)320-323
Original languageEnglish

Abstract

By using HBr-H3PO4-K2Cr2O7 solution, bevels through InP-based structures were prepared. On InP/InGaAsP structure the bevel angles in the range 3 x 10(-5) to 2 x 10(-4) rad were obtained with good linearity of the bevel profile. The dependence of bevel angle on the etchant flow speed was measured and discussed.

    Research areas

  • chemical etching, bevel, InP, InGaAs, InGaAsP, InGaAlAs, AUGER ANALYSIS

Discover related content

Find related publications, people, projects, datasets and more using interactive charts.

View graph of relations