Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

TY - JOUR

T1 - Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

AU - Li, Zhuoyi

AU - Zhang, Zhe

AU - Wei, Mengjie

AU - Lu, Xianyang

AU - Li, Taotao

AU - Zhou, Jian

AU - Yan, Yu

AU - Du, Jun

AU - Wang, Xinran

AU - Li, Yao

AU - He, Liang

AU - Wu, Jing

AU - Gao, Yang

AU - Zhang, Rong

AU - Xu, Yongbing

N1 - © 2024 The Author(s).

PY - 2024/11/20

Y1 - 2024/11/20

N2 - Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high-density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current-induced field-free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates. This field-free switching is primarily driven by the out-of-plane anti-damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation-determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out-of-plane spin polarization along the collinear direction of the spin-current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin–orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy-efficient spintronic devices technology.

AB - Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high-density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current-induced field-free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates. This field-free switching is primarily driven by the out-of-plane anti-damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation-determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out-of-plane spin polarization along the collinear direction of the spin-current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin–orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy-efficient spintronic devices technology.

KW - spin-orbit torque

KW - field-free

U2 - 10.1002/advs.202406924

DO - 10.1002/advs.202406924

M3 - Article

SN - 2198-3844

VL - 11

JO - Advanced Science

JF - Advanced Science

IS - 43

M1 - 2406924

ER -