Comparison of high power red-emitting diode laser designs for medical applications

B.S. Ryvkin; Evgeny Avrutin

doi:10.1007/s11082-024-06818-5

Comparison of high power red-emitting diode laser designs for medical applications

B.S. Ryvkin, Evgeny Avrutin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A comparison is made between, on the one hand, the red-emitting laser structure currently widely used for medical applications and based on an ultranarrow waveguide layer with a compressively strained QW active layer in it and, on the other hand, the red emitting laser using a broadened asymmetric waveguide structure with a bulk active layer near the p-cladding, proposed by us. It is shown that the proposed design promises substantial improvements over the ultranarrow one including lower series and thermal resistances, and higher catastrophic degradation threshold, while maintaining relatively narrow far field and allowing the typical power required for medical applications to be achieved at lower currents, particularly at elevated temperatures.

Original language	English
Article number	993
Number of pages	6
Journal	Optical and quantum electronics
Volume	56
Issue number	6
DOIs	https://doi.org/10.1007/s11082-024-06818-5
Publication status	Published - 26 Apr 2024

Bibliographical note

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10.1007/s11082-024-06818-5Licence: CC BY

Comparison of high power red-emitting diode laser designs for medical applications
© The Author(s) 2024
Final published version, 1.19 MBLicence: CC BY

Cite this

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AB - A comparison is made between, on the one hand, the red-emitting laser structure currently widely used for medical applications and based on an ultranarrow waveguide layer with a compressively strained QW active layer in it and, on the other hand, the red emitting laser using a broadened asymmetric waveguide structure with a bulk active layer near the p-cladding, proposed by us. It is shown that the proposed design promises substantial improvements over the ultranarrow one including lower series and thermal resistances, and higher catastrophic degradation threshold, while maintaining relatively narrow far field and allowing the typical power required for medical applications to be achieved at lower currents, particularly at elevated temperatures.

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