By the same authors

Compositional fluctuations in AlxGa1-xN layers grown on 6H-SiC (0001) by metal organic vapor phase epitaxy

Research output: Chapter in Book/Report/Conference proceedingChapter

Author(s)

  • R. Kroger
  • S. Einfeldt
  • Z. J. Reitmeier
  • R. Chierchia
  • P. Ryder
  • D. Hommel
  • R. F. Davis

Department/unit(s)

Publication details

Title of host publicationGan and Related Alloys-2002
DatePublished - 2003
Pages255-260
Number of pages6
EditorsC. Yu E. T. Speck J. S. Arakawa Y. Wetzel
Volume743
Original languageUndefined/Unknown

Publication series

NameMaterials Research Society Symposium Proceedings

Abstract

The microstructural evolution of AlxGa1-xN films grown by metalorganic vapor phase epitaxy on 6H-SiC (0001) was studied by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy in conjunction with energy dispersive X-ray spectroscopy. A significant spatial variation of composition was found in 100 nm thick layers the nature of which could be traced back to the initial stage of film formation. Upon nucleation two phases are formed: a wetting layer and isolated islands of high and low aluminum content, respectively. The observed results are discussed in terms of strain and growth rates.

Bibliographical note

Times Cited: 0 Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting DEC 02-06, 2002 BOSTON, MA Mat Res Soc

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