Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

Z. Nedelkoski; D. Kepaptsoglou; A. Ghasemi; B. Kuerbanjiang; P.J. Hasnip; Shinya Yamada; Kohei Hamaya; Q. M. Ramasse; A. Hirohata; V.K. Lazarov

doi:10.1088/0953-8984/28/39/395003

Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

Z. Nedelkoski, D. Kepaptsoglou, A. Ghasemi, B. Kuerbanjiang, P.J. Hasnip, Shinya Yamada, Kohei Hamaya, Q. M. Ramasse, A. Hirohata, V.K. Lazarov

Research output: Contribution to journal › Article › peer-review

Abstract

textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

Original language	English
Article number	395003
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of physics : Condensed matter
Volume	28
Issue number	39
Early online date	9 Aug 2016
DOIs	https://doi.org/10.1088/0953-8984/28/39/395003
Publication status	Published - 5 Oct 2016

Bibliographical note

Keywords

Heusler alloys,half-metals,spin-injection,spintronics

Access to Document

10.1088/0953-8984/28/39/395003

Controlling the half-metallicity
© 2016 IOP Publishing Ltd.
Final published version, 1.24 MBLicence: CC BY

Data set for CFAS_Si atomic structure determination
Lazarov, V. (Creator), University of York, 20 Jul 2016
DOI: 10.15124/89576114-1cf5-42f6-9536-5e94c80559dc
Dataset

Cite this

Nedelkoski, Z., Kepaptsoglou, D., Ghasemi, A., Kuerbanjiang, B., Hasnip, P. J., Yamada, S., Hamaya, K., Ramasse, Q. M., Hirohata, A., & Lazarov, V. K. (2016). Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si. Journal of physics : Condensed matter, 28(39), 1-6. Article 395003. https://doi.org/10.1088/0953-8984/28/39/395003

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abstract = "textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.",

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AU - Nedelkoski, Z.

AU - Kepaptsoglou, D.

AU - Ghasemi, A.

AU - Kuerbanjiang, B.

AU - Hasnip, P.J.

AU - Yamada, Shinya

AU - Hamaya, Kohei

AU - Ramasse, Q. M.

AU - Hirohata, A.

AU - Lazarov, V.K.

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N2 - textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

AB - textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.

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