Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si

Z. Nedelkoski, D. Kepaptsoglou, A. Ghasemi, B. Kuerbanjiang, P.J. Hasnip, Shinya Yamada, Kohei Hamaya, Q. M. Ramasse, A. Hirohata, V.K. Lazarov

Research output: Contribution to journalArticlepeer-review


textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.
Original languageEnglish
Article number395003
Pages (from-to)1-6
Number of pages6
JournalJournal of physics : Condensed matter
Issue number39
Early online date9 Aug 2016
Publication statusPublished - 5 Oct 2016

Bibliographical note

© 2016 IOP Publishing Ltd


  • Heusler alloys,half-metals,spin-injection,spintronics

Cite this