Abstract
textcopyright 2016 IOP Publishing Ltd. By using first-principles calculations we show that the spin-polarization reverses its sign at atomically abrupt interfaces between the half-metallic Co 2 (Fe,Mn)(Al,Si) and Si(1 1 1). This unfavourable spin-electronic configuration at the Fermi-level can be completely removed by introducing a Si-Co-Si monolayer at the interface. In addition, this interfacial monolayer shifts the Fermi-level from the valence band edge close to the conduction band edge of Si. We show that such a layer is energetically favourable to exist at the interface. This was further confirmed by direct observations of CoSi 2 nano-islands at the interface, by employing atomic resolution scanning transmission electron microscopy.
Original language | English |
---|---|
Article number | 395003 |
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Journal of physics : Condensed matter |
Volume | 28 |
Issue number | 39 |
Early online date | 9 Aug 2016 |
DOIs | |
Publication status | Published - 5 Oct 2016 |
Bibliographical note
© 2016 IOP Publishing LtdKeywords
- Heusler alloys,half-metals,spin-injection,spintronics
Datasets
-
Data set for CFAS_Si atomic structure determination
Lazarov, V. (Creator), University of York, 20 Jul 2016
DOI: 10.15124/89576114-1cf5-42f6-9536-5e94c80559dc
Dataset