Correlating Growth Habit of Boron-Rich Low-Dimensional Materials with Defect Structures by Electron Microscopy

Zhiyang Yu; Xin Fu; Jun Yuan; Steffan Lea; Martin Harmer; Jing Zhu

doi:10.1021/cg301657c

Correlating Growth Habit of Boron-Rich Low-Dimensional Materials with Defect Structures by Electron Microscopy

Zhiyang Yu, Xin Fu, Jun Yuan, Steffan Lea, Martin Harmer, Jing Zhu

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Boron carbide and boron suboxide low-dimensional materials with α-rhombohedral symmetry, here simply referred to as boron-rich nanomaterials, exhibit a variety of growth habits, including rodlike fibers, slablike platelets, and some intermediary structures, as confirmed by scanning electron microscopy (SEM) observation. The defect structures of these variants have been thoroughly characterized by advanced transmission electron microscopy techniques, which reveal the prevalence of two basic contact twinning: parallel twinning and cyclic twinning. The growth habits and defect structures of boron-rich materials are found to be strongly correlated. This has been summarized by a growth habit map, which allows us to establish a quick strategy for the determination of defect structures by simple SEM shots in boron-rich materials, alleviating ceramists from the need and complexity in the identification of multitwinned structures.

Original language	English
Pages (from-to)	2269-2276
Number of pages	8
Journal	CRYSTAL GROWTH DESIGN
Volume	13
Issue number	6
DOIs	https://doi.org/10.1021/cg301657c
Publication status	Published - 5 Jun 2013

Access to Document

10.1021/cg301657c

http://pubs.acs.org/doi/abs/10.1021/cg301657c

Cite this

@article{8f9dcc401a744c86bb9f99724b650b5e,

title = "Correlating Growth Habit of Boron-Rich Low-Dimensional Materials with Defect Structures by Electron Microscopy",

abstract = "Boron carbide and boron suboxide low-dimensional materials with α-rhombohedral symmetry, here simply referred to as boron-rich nanomaterials, exhibit a variety of growth habits, including rodlike fibers, slablike platelets, and some intermediary structures, as confirmed by scanning electron microscopy (SEM) observation. The defect structures of these variants have been thoroughly characterized by advanced transmission electron microscopy techniques, which reveal the prevalence of two basic contact twinning: parallel twinning and cyclic twinning. The growth habits and defect structures of boron-rich materials are found to be strongly correlated. This has been summarized by a growth habit map, which allows us to establish a quick strategy for the determination of defect structures by simple SEM shots in boron-rich materials, alleviating ceramists from the need and complexity in the identification of multitwinned structures.",

author = "Zhiyang Yu and Xin Fu and Jun Yuan and Steffan Lea and Martin Harmer and Jing Zhu",

year = "2013",

month = jun,

day = "5",

doi = "10.1021/cg301657c",

language = "English",

volume = "13",

pages = "2269--2276",

journal = "CRYSTAL GROWTH DESIGN",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Correlating Growth Habit of Boron-Rich Low-Dimensional Materials with Defect Structures by Electron Microscopy

AU - Yu, Zhiyang

AU - Fu, Xin

AU - Yuan, Jun

AU - Lea, Steffan

AU - Harmer, Martin

AU - Zhu, Jing

PY - 2013/6/5

Y1 - 2013/6/5

N2 - Boron carbide and boron suboxide low-dimensional materials with α-rhombohedral symmetry, here simply referred to as boron-rich nanomaterials, exhibit a variety of growth habits, including rodlike fibers, slablike platelets, and some intermediary structures, as confirmed by scanning electron microscopy (SEM) observation. The defect structures of these variants have been thoroughly characterized by advanced transmission electron microscopy techniques, which reveal the prevalence of two basic contact twinning: parallel twinning and cyclic twinning. The growth habits and defect structures of boron-rich materials are found to be strongly correlated. This has been summarized by a growth habit map, which allows us to establish a quick strategy for the determination of defect structures by simple SEM shots in boron-rich materials, alleviating ceramists from the need and complexity in the identification of multitwinned structures.

AB - Boron carbide and boron suboxide low-dimensional materials with α-rhombohedral symmetry, here simply referred to as boron-rich nanomaterials, exhibit a variety of growth habits, including rodlike fibers, slablike platelets, and some intermediary structures, as confirmed by scanning electron microscopy (SEM) observation. The defect structures of these variants have been thoroughly characterized by advanced transmission electron microscopy techniques, which reveal the prevalence of two basic contact twinning: parallel twinning and cyclic twinning. The growth habits and defect structures of boron-rich materials are found to be strongly correlated. This has been summarized by a growth habit map, which allows us to establish a quick strategy for the determination of defect structures by simple SEM shots in boron-rich materials, alleviating ceramists from the need and complexity in the identification of multitwinned structures.

U2 - 10.1021/cg301657c

DO - 10.1021/cg301657c

M3 - Article

SN - 1528-7483

VL - 13

SP - 2269

EP - 2276

JO - CRYSTAL GROWTH DESIGN

JF - CRYSTAL GROWTH DESIGN

IS - 6

ER -