Correlating STM with other techniques of surface crystallography.

S P Tear; A H Jones; J M Walton

Correlating STM with other techniques of surface crystallography.

S P Tear, A H Jones, J M Walton

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Scanning tunnelling microscopy (STM) is a unique and very powerful technique in surface science for studying the arrangement of atoms at the surface of metals and semiconductors. On its own, the STM can provide semi-quantitative information on the local atomic arrangements, which is difficult to obtain any other way. However, the quantitative interpretation of STM images is not easy. Additional information is required from other techniques to assist in the interpretation. Correlation of results from these experimental techniques with STM results, ideally taken in-situ, is one way forward. Results are presented where LEED I(V) analysis has been correlated with STM results for the Si(111)(root 3x root 3)R30 degrees-Pb surface. In addition, the spatial correlation of current image tunnelling spectroscopy (CITS) is exploited in evaluating the application of the Hotelling transform, or Principal Component Analysis, to simulated CITS images.

Original language	English
Title of host publication	ELECTRON MICROSCOPY AND ANALYSIS 1995
Editors	D Cherns
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	237-242
Number of pages	6
ISBN (Print)	0-7503-0357-3
Publication status	Published - 1995
Event	Institute-of-Physics Electron-Microscopy-and-Analysis-Group Conference - BIRMINGHAM Duration: 12 Sept 1995 → 15 Sept 1995

Conference

Conference	Institute-of-Physics Electron-Microscopy-and-Analysis-Group Conference
City	BIRMINGHAM
Period	12/09/95 → 15/09/95

Keywords

INTERFACE STRUCTURE
MICROSCOPY
SPECTROSCOPY
SI(111)
PB

Cite this

@inproceedings{1a2a3b2af6414002a0152cce15c8bba6,

title = "Correlating STM with other techniques of surface crystallography.",

abstract = "Scanning tunnelling microscopy (STM) is a unique and very powerful technique in surface science for studying the arrangement of atoms at the surface of metals and semiconductors. On its own, the STM can provide semi-quantitative information on the local atomic arrangements, which is difficult to obtain any other way. However, the quantitative interpretation of STM images is not easy. Additional information is required from other techniques to assist in the interpretation. Correlation of results from these experimental techniques with STM results, ideally taken in-situ, is one way forward. Results are presented where LEED I(V) analysis has been correlated with STM results for the Si(111)(root 3x root 3)R30 degrees-Pb surface. In addition, the spatial correlation of current image tunnelling spectroscopy (CITS) is exploited in evaluating the application of the Hotelling transform, or Principal Component Analysis, to simulated CITS images.",

keywords = "INTERFACE STRUCTURE, MICROSCOPY, SPECTROSCOPY, SI(111), PB",

author = "Tear, {S P} and Jones, {A H} and Walton, {J M}",

year = "1995",

language = "English",

isbn = "0-7503-0357-3",

pages = "237--242",

editor = "D Cherns",

booktitle = "ELECTRON MICROSCOPY AND ANALYSIS 1995",

publisher = "IOP Publishing",

address = "United Kingdom",

note = "Institute-of-Physics Electron-Microscopy-and-Analysis-Group Conference ; Conference date: 12-09-1995 Through 15-09-1995",

}

TY - GEN

T1 - Correlating STM with other techniques of surface crystallography.

AU - Tear, S P

AU - Jones, A H

AU - Walton, J M

PY - 1995

Y1 - 1995

N2 - Scanning tunnelling microscopy (STM) is a unique and very powerful technique in surface science for studying the arrangement of atoms at the surface of metals and semiconductors. On its own, the STM can provide semi-quantitative information on the local atomic arrangements, which is difficult to obtain any other way. However, the quantitative interpretation of STM images is not easy. Additional information is required from other techniques to assist in the interpretation. Correlation of results from these experimental techniques with STM results, ideally taken in-situ, is one way forward. Results are presented where LEED I(V) analysis has been correlated with STM results for the Si(111)(root 3x root 3)R30 degrees-Pb surface. In addition, the spatial correlation of current image tunnelling spectroscopy (CITS) is exploited in evaluating the application of the Hotelling transform, or Principal Component Analysis, to simulated CITS images.

AB - Scanning tunnelling microscopy (STM) is a unique and very powerful technique in surface science for studying the arrangement of atoms at the surface of metals and semiconductors. On its own, the STM can provide semi-quantitative information on the local atomic arrangements, which is difficult to obtain any other way. However, the quantitative interpretation of STM images is not easy. Additional information is required from other techniques to assist in the interpretation. Correlation of results from these experimental techniques with STM results, ideally taken in-situ, is one way forward. Results are presented where LEED I(V) analysis has been correlated with STM results for the Si(111)(root 3x root 3)R30 degrees-Pb surface. In addition, the spatial correlation of current image tunnelling spectroscopy (CITS) is exploited in evaluating the application of the Hotelling transform, or Principal Component Analysis, to simulated CITS images.

KW - INTERFACE STRUCTURE

KW - MICROSCOPY

KW - SPECTROSCOPY

KW - SI(111)

KW - PB

M3 - Conference contribution

SN - 0-7503-0357-3

SP - 237

EP - 242

BT - ELECTRON MICROSCOPY AND ANALYSIS 1995

A2 - Cherns, D

PB - IOP Publishing

CY - BRISTOL

T2 - Institute-of-Physics Electron-Microscopy-and-Analysis-Group Conference

Y2 - 12 September 1995 through 15 September 1995

ER -