Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

Luke Roger Fleet; Kenta Yoshida; Hiroomi Kobayashi; Y. Kaneko; S. Matsuzaka; Yuzo Ohno; Hideo Ohno; Syuta Honda; Junichiro Inoue; Atsufumi Hirohata

doi:10.1103/PhysRevB.87.024401

Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

Luke Roger Fleet, Kenta Yoshida, Hiroomi Kobayashi, Y. Kaneko, S. Matsuzaka, Yuzo Ohno, Hideo Ohno, Syuta Honda, Junichiro Inoue, Atsufumi Hirohata

Research output: Contribution to conference › Paper › peer-review

Abstract

Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.

Original language	English
Pages	1-5
Number of pages	5
DOIs	https://doi.org/10.1103/PhysRevB.87.024401
Publication status	Published - 2 Jan 2013

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10.1103/PhysRevB.87.024401

http://journals.aps.org/prb/pdf/10.1103/PhysRevB.87.024401

Cite this

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title = "Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films",

abstract = "Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.",

author = "Fleet, {Luke Roger} and Kenta Yoshida and Hiroomi Kobayashi and Y. Kaneko and S. Matsuzaka and Yuzo Ohno and Hideo Ohno and Syuta Honda and Junichiro Inoue and Atsufumi Hirohata",

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doi = "10.1103/PhysRevB.87.024401",

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T1 - Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films

AU - Fleet, Luke Roger

AU - Yoshida, Kenta

AU - Kobayashi, Hiroomi

AU - Kaneko, Y.

AU - Matsuzaka, S.

AU - Ohno, Yuzo

AU - Ohno, Hideo

AU - Honda, Syuta

AU - Inoue, Junichiro

AU - Hirohata, Atsufumi

PY - 2013/1/2

Y1 - 2013/1/2

N2 - Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.

AB - Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure.

U2 - 10.1103/PhysRevB.87.024401

DO - 10.1103/PhysRevB.87.024401

M3 - Paper

SP - 1

EP - 5

ER -