Correlations between atomic structure and giant magnetoresistance ratio in Co2 (Fe,Mn)Si spin valves

Leonardo Lari; K. Yoshida; P. L. Galindo; J. Sato; J. Sizeland; D. Gilks; G. M. Uddin; Z. Nedelkoski; P. J. Hasnip; A. Hirohata; M. Oogane; Y. Ando; V. K. Lazarov

doi:10.1088/0022-3727/47/32/322003

Correlations between atomic structure and giant magnetoresistance ratio in Co₂ (Fe,Mn)Si spin valves

Leonardo Lari, K. Yoshida, P. L. Galindo, J. Sato, J. Sizeland, D. Gilks, G. M. Uddin, Z. Nedelkoski, P. J. Hasnip, A. Hirohata, M. Oogane, Y. Ando, V. K. Lazarov

Research output: Contribution to journal › Article › peer-review

Abstract

We show that the magnetoresistance of Co₂Fe_xMn _1-xSi-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co₂Fe_xMn_1-xSi/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350°C and 500°C creates partial B2/L2₁ and fully L2 ₁ ordering of electrodes, respectively. Interface structural studies show that the Ag/Co₂Fe_xMn_1-xSi interface is more ordered compared to the Co₂Fe_xMn_1-xSi/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible.

Original language	English
Article number	322003
Journal	Journal of Physics D: Applied Physics
Volume	47
Issue number	32
DOIs	https://doi.org/10.1088/0022-3727/47/32/322003
Publication status	Published - 13 Aug 2014

Keywords

half-metals
Heusler alloys
spintronics materials
thin films

Access to Document

10.1088/0022-3727/47/32/322003

Cite this

Lari, L., Yoshida, K., Galindo, P. L., Sato, J., Sizeland, J., Gilks, D., Uddin, G. M., Nedelkoski, Z., Hasnip, P. J., Hirohata, A., Oogane, M., Ando, Y., & Lazarov, V. K. (2014). Correlations between atomic structure and giant magnetoresistance ratio in Co₂ (Fe,Mn)Si spin valves. Journal of Physics D: Applied Physics, 47(32), Article 322003. https://doi.org/10.1088/0022-3727/47/32/322003

@article{eed53cbb4e97452f891291710658f382,

title = "Correlations between atomic structure and giant magnetoresistance ratio in Co2 (Fe,Mn)Si spin valves",

abstract = "We show that the magnetoresistance of Co2FexMn 1-xSi-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co2FexMn1-xSi/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350°C and 500°C creates partial B2/L21 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co2FexMn1-xSi interface is more ordered compared to the Co2FexMn1-xSi/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible.",

keywords = "half-metals, Heusler alloys, spintronics materials, thin films",

author = "Leonardo Lari and K. Yoshida and Galindo, {P. L.} and J. Sato and J. Sizeland and D. Gilks and Uddin, {G. M.} and Z. Nedelkoski and Hasnip, {P. J.} and A. Hirohata and M. Oogane and Y. Ando and Lazarov, {V. K.}",

year = "2014",

month = aug,

day = "13",

doi = "10.1088/0022-3727/47/32/322003",

language = "English",

volume = "47",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "32",

}

Lari, L, Yoshida, K, Galindo, PL, Sato, J, Sizeland, J, Gilks, D, Uddin, GM, Nedelkoski, Z, Hasnip, PJ , Hirohata, A, Oogane, M, Ando, Y & Lazarov, VK 2014, 'Correlations between atomic structure and giant magnetoresistance ratio in Co₂ (Fe,Mn)Si spin valves', Journal of Physics D: Applied Physics, vol. 47, no. 32, 322003. https://doi.org/10.1088/0022-3727/47/32/322003

TY - JOUR

T1 - Correlations between atomic structure and giant magnetoresistance ratio in Co2 (Fe,Mn)Si spin valves

AU - Lari, Leonardo

AU - Yoshida, K.

AU - Galindo, P. L.

AU - Sato, J.

AU - Sizeland, J.

AU - Gilks, D.

AU - Uddin, G. M.

AU - Nedelkoski, Z.

AU - Hasnip, P. J.

AU - Hirohata, A.

AU - Oogane, M.

AU - Ando, Y.

AU - Lazarov, V. K.

PY - 2014/8/13

Y1 - 2014/8/13

N2 - We show that the magnetoresistance of Co2FexMn 1-xSi-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co2FexMn1-xSi/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350°C and 500°C creates partial B2/L21 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co2FexMn1-xSi interface is more ordered compared to the Co2FexMn1-xSi/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible.

AB - We show that the magnetoresistance of Co2FexMn 1-xSi-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co2FexMn1-xSi/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350°C and 500°C creates partial B2/L21 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co2FexMn1-xSi interface is more ordered compared to the Co2FexMn1-xSi/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible.

KW - half-metals

KW - Heusler alloys

KW - spintronics materials

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84904700578&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/47/32/322003

DO - 10.1088/0022-3727/47/32/322003

M3 - Article

AN - SCOPUS:84904700578

SN - 0022-3727

VL - 47

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 32

M1 - 322003

ER -