Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation

William James Frost; Kelvin Elphick; Marjan Samiepour; Atsufumi Hirohata

doi:10.1038/s41598-021-96706-9

Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation

William James Frost, Kelvin Elphick, Marjan Samiepour, Atsufumi Hirohata

Research output: Contribution to journal › Article › peer-review

Abstract

The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.

Original language	English
Article number	17382
Journal	Scientific Reports
Volume	11
DOIs	https://doi.org/10.1038/s41598-021-96706-9
Publication status	Published - 30 Aug 2021

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Cite this

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title = "Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation",

abstract = "The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.",

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