Abstract
Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.
| Original language | English |
|---|---|
| Pages (from-to) | 4980-4986 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 47 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1 Sept 2018 |
Bibliographical note
Publisher Copyright:© 2018, The Minerals, Metals & Materials Society.
Keywords
- AlGaN
- cathodoluminescence spectroscopy
- defect
- GaN
- high-electron-mobility transistor
- hyperspectral imaging
- nanowire
- SiC
- surface photovoltage spectroscopy
- Wide-bandgap semiconductor
- ZnO