An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.
|Journal||Journal of Applied Physics|
|Publication status||Published - 21 Mar 2013|
- HIGH-EFFICIENCY; WAVE GUIDE