Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser

Evgeny Avrutin; Boris Ryvkin

doi:10.1063/1.4795586

Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser

Evgeny Avrutin, Boris Ryvkin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.

Original language	English
Article number	113108
Pages (from-to)	1-7
Journal	Journal of Applied Physics
Volume	113
Issue number	11
DOIs	https://doi.org/10.1063/1.4795586
Publication status	Published - 21 Mar 2013

Keywords

HIGH-EFFICIENCY; WAVE GUIDE

Access to Document

10.1063/1.4795586

http://jap.aip.org/resource/1/japiau/v113/i11/p113108_s1

Cite this

@article{3682ff706d03422bbd5dfabc14ddacc5,

title = "Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser",

abstract = "An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.",

keywords = "HIGH-EFFICIENCY; WAVE GUIDE",

author = "Evgeny Avrutin and Boris Ryvkin",

year = "2013",

month = mar,

day = "21",

doi = "10.1063/1.4795586",

language = "English",

volume = "113",

pages = "1--7",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser

AU - Avrutin, Evgeny

AU - Ryvkin, Boris

PY - 2013/3/21

Y1 - 2013/3/21

N2 - An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.

AB - An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.

KW - HIGH-EFFICIENCY; WAVE GUIDE

U2 - 10.1063/1.4795586

DO - 10.1063/1.4795586

M3 - Article

VL - 113

SP - 1

EP - 7

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113108

ER -