Abstract
An analytical model is developed for the carrier density distribution and the associated Dember type electric field/voltage in the waveguide layer of a high-power semiconductor laser for arbitrary levels of doping and injection. Nonlinear resistance of the waveguide layer is analysed; it is shown that at a very high injection level, doping the waveguide layer leads to almost negligible decrease in its effective resistance.
Original language | English |
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Article number | 113108 |
Pages (from-to) | 1-7 |
Journal | Journal of Applied Physics |
Volume | 113 |
Issue number | 11 |
DOIs | |
Publication status | Published - 21 Mar 2013 |
Keywords
- HIGH-EFFICIENCY; WAVE GUIDE