Development of an optically gated Fe/n-GaAs spin-polarized transistor

Jun-Young Kim; Marjan Samiepour; Edward Jackson; Jeongchun Ryu; Daisuke Iizaka; Takahito Saito; Makoto Kohda; Junsaku Nitta; Harvey E Beere; D.A. Ritchie; Atsufumi Hirohata

doi:10.1103/PhysRevB.106.134404

Development of an optically gated Fe/n-GaAs spin-polarized transistor

Jun-Young Kim, Marjan Samiepour, Edward Jackson, Jeongchun Ryu, Daisuke Iizaka, Takahito Saito, Makoto Kohda, Junsaku Nitta, Harvey E Beere, D.A. Ritchie, Atsufumi Hirohata

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Efficient modulation of electrically injected spin signals that is suitable for modern-day transistor functionality is yet to be established. In this work, we demonstrate in detail the fabrication of a Fe/n-GaAs spin injection device and the experimental setup for an optical gating of the nonlocal spin transport signal. In situ scanning electron microscopy interface imaging reveals more uniform current distribution at the Fe/n-GaAs injector interface at bias voltages higher than the Schottky barrier height. Three- and four-terminal Hanle measurements confirm successful spin injection into n-GaAs, with strong interfacial spin dephasing at high magnetic fields. A time-resolved pump-probe Kerr rotation setup was used to illuminate circularly polarized light in the region of the pure spin current in Fe/n-GaAs lateral spin injection devices, where (0.4±0.3)% modulation of the nonlocal signal depending on the light helicity was observed at 30K.

Original language	English
Article number	134404
Number of pages	6
Journal	Physical Review B
Volume	106
Issue number	134404
DOIs	https://doi.org/10.1103/PhysRevB.106.134404
Publication status	Published - 7 Oct 2022

Bibliographical note

©2022 American Physical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

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10.1103/PhysRevB.106.134404

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©2022 American Physical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
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Cite this

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title = "Development of an optically gated Fe/n-GaAs spin-polarized transistor",

abstract = "Efficient modulation of electrically injected spin signals that is suitable for modern-day transistor functionality is yet to be established. In this work, we demonstrate in detail the fabrication of a Fe/n-GaAs spin injection device and the experimental setup for an optical gating of the nonlocal spin transport signal. In situ scanning electron microscopy interface imaging reveals more uniform current distribution at the Fe/n-GaAs injector interface at bias voltages higher than the Schottky barrier height. Three- and four-terminal Hanle measurements confirm successful spin injection into n-GaAs, with strong interfacial spin dephasing at high magnetic fields. A time-resolved pump-probe Kerr rotation setup was used to illuminate circularly polarized light in the region of the pure spin current in Fe/n-GaAs lateral spin injection devices, where (0.4±0.3)% modulation of the nonlocal signal depending on the light helicity was observed at 30K.",

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AU - Kim, Jun-Young

AU - Samiepour, Marjan

AU - Jackson, Edward

AU - Ryu, Jeongchun

AU - Iizaka, Daisuke

AU - Saito, Takahito

AU - Kohda, Makoto

AU - Nitta, Junsaku

AU - Beere, Harvey E

AU - Ritchie, D.A.

AU - Hirohata, Atsufumi

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N2 - Efficient modulation of electrically injected spin signals that is suitable for modern-day transistor functionality is yet to be established. In this work, we demonstrate in detail the fabrication of a Fe/n-GaAs spin injection device and the experimental setup for an optical gating of the nonlocal spin transport signal. In situ scanning electron microscopy interface imaging reveals more uniform current distribution at the Fe/n-GaAs injector interface at bias voltages higher than the Schottky barrier height. Three- and four-terminal Hanle measurements confirm successful spin injection into n-GaAs, with strong interfacial spin dephasing at high magnetic fields. A time-resolved pump-probe Kerr rotation setup was used to illuminate circularly polarized light in the region of the pure spin current in Fe/n-GaAs lateral spin injection devices, where (0.4±0.3)% modulation of the nonlocal signal depending on the light helicity was observed at 30K.

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