Dilute nitride resonant-cavity light emitting diode

Fahrettin Sarcan; Yue Wang; Thomas Fraser Krauss; Tulin Erucar; Ayse Erol

doi:10.1016/j.optlastec.2019.105888

Dilute nitride resonant-cavity light emitting diode

Fahrettin Sarcan, Yue Wang, Thomas Fraser Krauss, Tulin Erucar, Ayse Erol

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.

Original language	English
Article number	105888
Number of pages	4
Journal	Optics & Laser Technology
Volume	122
Early online date	14 Oct 2019
DOIs	https://doi.org/10.1016/j.optlastec.2019.105888
Publication status	Published - Feb 2020

Bibliographical note

Keywords

Dilute Nitride
RCLED
Resonant Cavity
Light emitting diodes
GaInNAs

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10.1016/j.optlastec.2019.105888

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Cite this

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title = "Dilute nitride resonant-cavity light emitting diode",

abstract = "Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.",

keywords = "Dilute Nitride, RCLED, Resonant Cavity, Light emitting diodes, GaInNAs",

author = "Fahrettin Sarcan and Yue Wang and Krauss, {Thomas Fraser} and Tulin Erucar and Ayse Erol",

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T1 - Dilute nitride resonant-cavity light emitting diode

AU - Sarcan, Fahrettin

AU - Wang, Yue

AU - Krauss, Thomas Fraser

AU - Erucar, Tulin

AU - Erol, Ayse

PY - 2020/2

Y1 - 2020/2

N2 - Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.

AB - Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.

KW - Dilute Nitride

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KW - Light emitting diodes

KW - GaInNAs

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