Dilute nitride resonant-cavity light emitting diode

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Dilute nitride resonant-cavity light emitting diode. / Sarcan, Fahrettin; Wang, Yue; Krauss, Thomas Fraser; Erucar, Tulin; Erol, Ayse.

In: Optics & Laser Technology, Vol. 122, 105888, 02.2020.

Research output: Contribution to journalArticlepeer-review

Harvard

Sarcan, F, Wang, Y, Krauss, TF, Erucar, T & Erol, A 2020, 'Dilute nitride resonant-cavity light emitting diode', Optics & Laser Technology, vol. 122, 105888. https://doi.org/10.1016/j.optlastec.2019.105888

APA

Sarcan, F., Wang, Y., Krauss, T. F., Erucar, T., & Erol, A. (2020). Dilute nitride resonant-cavity light emitting diode. Optics & Laser Technology, 122, [105888]. https://doi.org/10.1016/j.optlastec.2019.105888

Vancouver

Sarcan F, Wang Y, Krauss TF, Erucar T, Erol A. Dilute nitride resonant-cavity light emitting diode. Optics & Laser Technology. 2020 Feb;122. 105888. https://doi.org/10.1016/j.optlastec.2019.105888

Author

Sarcan, Fahrettin ; Wang, Yue ; Krauss, Thomas Fraser ; Erucar, Tulin ; Erol, Ayse. / Dilute nitride resonant-cavity light emitting diode. In: Optics & Laser Technology. 2020 ; Vol. 122.

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@article{d572b72e98ab4363b7b2d97d88a02abc,
title = "Dilute nitride resonant-cavity light emitting diode",
abstract = "Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.",
keywords = "Dilute Nitride, RCLED, Resonant Cavity, Light emitting diodes, GaInNAs",
author = "Fahrettin Sarcan and Yue Wang and Krauss, {Thomas Fraser} and Tulin Erucar and Ayse Erol",
note = "{\textcopyright} 2019 Elsevier Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. ",
year = "2020",
month = feb,
doi = "10.1016/j.optlastec.2019.105888",
language = "English",
volume = "122",
journal = "Optics & Laser Technology",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Dilute nitride resonant-cavity light emitting diode

AU - Sarcan, Fahrettin

AU - Wang, Yue

AU - Krauss, Thomas Fraser

AU - Erucar, Tulin

AU - Erol, Ayse

N1 - © 2019 Elsevier Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.

PY - 2020/2

Y1 - 2020/2

N2 - Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.

AB - Resonant cavity LEDs (RCLEDs) are a viable and low-cost alternative light source to lasers for optical communication systems in the 1.3 µm O-band. Most work in this area has been conducted on InP-based material, which is inherently costly, devices often require cooling and the refractive index contrast for constructing mirrors is low. Here, we demonstrate a high-performance GaAs-based RCLED using a dilute nitride GaInNAs active layer emitting in the 1.3 μm wavelength window. While previous 1.3 µm RCLEDs have used metallic mirrors on the back of the device, we exploit the high refractive index contrast of the GaAs/AlAs system to place Distributed Bragg mirrors on both sides of the active layer and achieve superior performance. The external quantum efficiency of the devices is 20% and the full width at half maximum of the emission spectrum is 5.2 nm at room temperature, into a narrow angular cone. The emission power from an 88 μm diameter aperture is 0.5 mW, which, together with the narrow spectral linewidth, makes the device suitable for deployment in a coarse Wavelength Division Multiplexing (WDM) communications system.

KW - Dilute Nitride

KW - RCLED

KW - Resonant Cavity

KW - Light emitting diodes

KW - GaInNAs

U2 - 10.1016/j.optlastec.2019.105888

DO - 10.1016/j.optlastec.2019.105888

M3 - Article

VL - 122

JO - Optics & Laser Technology

JF - Optics & Laser Technology

M1 - 105888

ER -