Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films

Tariq F. Alhuwaymel, Robert Carpenter, Chris Nga Tung Yu, Balati Kuerbanjiang, Ranjdar M. Abdullah, Vlado K. Lazarov, Mohamed El-Gomati, Atsufumi Hirohata

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In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

Original languageEnglish
Article number17D131
JournalJournal of Applied Physics
Issue number17
Publication statusPublished - 2015

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