Abstract
In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.
Original language | English |
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Article number | 17D131 |
Journal | Journal of Applied Physics |
Volume | 117 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2015 |