Direct band-gap measurement on epitaxial Co₂FeAl_0.5Si_0.5 Heusler-alloy films

TY - JOUR

T1 - Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films

AU - Alhuwaymel, Tariq F.

AU - Carpenter, Robert

AU - Yu, Chris Nga Tung

AU - Kuerbanjiang, Balati

AU - Abdullah, Ranjdar M.

AU - Lazarov, Vlado K.

AU - El-Gomati, Mohamed

AU - Hirohata, Atsufumi

PY - 2015

Y1 - 2015

N2 - In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

AB - In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

UR - http://www.scopus.com/inward/record.url?scp=84926500727&partnerID=8YFLogxK

U2 - 10.1063/1.4916817

DO - 10.1063/1.4916817

M3 - Article

AN - SCOPUS:84926500727

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 17D131

ER -