Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor

Xiaoping Zha; Mohamed M. El-Gomati; Li Chen; Chris Walker; Andy T. Clark; Renato Turchetta; Mohamed M El Gomati

doi:10.1109/TED.2012.2219623

Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor

Xiaoping Zha^*, Mohamed M. El-Gomati, Li Chen, Chris Walker, Andy T. Clark, Renato Turchetta, Mohamed M El Gomati

^*Corresponding author for this work

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.

Original language	English
Pages (from-to)	3594-3600
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2219623
Publication status	Published - 18 Dec 2012

Keywords

CMOS image sensors
ANGLE
Active pixel sensors (APSs)
ACTIVE PIXEL SENSOR
SILICON
PERFORMANCE
LIFETIME
DIFFUSION
SURFACE
DEVICES
FIELD
MICROSCOPY
electron microscopy

Access to Document

10.1109/TED.2012.2219623

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6332500

Cite this

@article{a50f7a4a0134416ea24964ecf8f78690,

title = "Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor",

abstract = "Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.",

keywords = "CMOS image sensors, ANGLE, Active pixel sensors (APSs), ACTIVE PIXEL SENSOR, SILICON, PERFORMANCE, LIFETIME, DIFFUSION, SURFACE, DEVICES, FIELD, MICROSCOPY, electron microscopy",

author = "Xiaoping Zha and El-Gomati, {Mohamed M.} and Li Chen and Chris Walker and Clark, {Andy T.} and Renato Turchetta and {El Gomati}, {Mohamed M}",

year = "2012",

month = dec,

day = "18",

doi = "10.1109/TED.2012.2219623",

language = "English",

volume = "59",

pages = "3594--3600",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

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T1 - Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor

AU - Zha, Xiaoping

AU - El-Gomati, Mohamed M.

AU - Chen, Li

AU - Walker, Chris

AU - Clark, Andy T.

AU - Turchetta, Renato

AU - El Gomati, Mohamed M

PY - 2012/12/18

Y1 - 2012/12/18

N2 - Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.

AB - Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.

KW - CMOS image sensors

KW - ANGLE

KW - Active pixel sensors (APSs)

KW - ACTIVE PIXEL SENSOR

KW - SILICON

KW - PERFORMANCE

KW - LIFETIME

KW - DIFFUSION

KW - SURFACE

KW - DEVICES

KW - FIELD

KW - MICROSCOPY

KW - electron microscopy

U2 - 10.1109/TED.2012.2219623

DO - 10.1109/TED.2012.2219623

M3 - Article

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EP - 3600

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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ER -