Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor

Xiaoping Zha*, Mohamed M. El-Gomati, Li Chen, Chris Walker, Andy T. Clark, Renato Turchetta, Mohamed M El Gomati

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.

Original languageEnglish
Pages (from-to)3594-3600
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
Publication statusPublished - 18 Dec 2012

Keywords

  • CMOS image sensors
  • ANGLE
  • Active pixel sensors (APSs)
  • ACTIVE PIXEL SENSOR
  • SILICON
  • PERFORMANCE
  • LIFETIME
  • DIFFUSION
  • SURFACE
  • DEVICES
  • FIELD
  • MICROSCOPY
  • electron microscopy

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