Abstract
Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.
Original language | English |
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Pages (from-to) | 3594-3600 |
Journal | IEEE Transactions on Electron Devices |
Volume | 59 |
Issue number | 12 |
DOIs | |
Publication status | Published - 18 Dec 2012 |
Keywords
- CMOS image sensors
- ANGLE
- Active pixel sensors (APSs)
- ACTIVE PIXEL SENSOR
- SILICON
- PERFORMANCE
- LIFETIME
- DIFFUSION
- SURFACE
- DEVICES
- FIELD
- MICROSCOPY
- electron microscopy