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Dynamic modelling of electrooptically modulated vertical compound cavity surface emitting semiconductor lasers
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Albugami_et_al-2017-Optical_and_Quantum_Electronics
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Publication details
| Journal | Optical and quantum electronics |
|---|---|
| Date | Accepted/In press - 20 Jul 2017 |
| Date | Published (current) - 24 Aug 2017 |
| Issue number | 9 |
| Volume | 49 |
| Number of pages | 19 |
| Pages (from-to) | 1-19 |
| Original language | English |
Abstract
A generalized rate equation model is used to simulate the interrelated amplitude
and frequency modulation properties of Electrooptically Modulated Vertical Compound Cavity Surface Emitting Semiconductor Lasers in both large and small signal modulation regimes. It is shown that the photon lifetime in the modulator subcavity provides the ultimate limit for the 3 dB modulation cutoff frequency. It is shown that there is an optimum design (number of periods) of both the intermediate and top multistack reflectors to maximise the large-signal modulation quality.
and frequency modulation properties of Electrooptically Modulated Vertical Compound Cavity Surface Emitting Semiconductor Lasers in both large and small signal modulation regimes. It is shown that the photon lifetime in the modulator subcavity provides the ultimate limit for the 3 dB modulation cutoff frequency. It is shown that there is an optimum design (number of periods) of both the intermediate and top multistack reflectors to maximise the large-signal modulation quality.
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©The Author(s) 2017
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