Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)

Vlado K. Lazarov; Zhuhua Cai; Kenta Yoshida; K. Honglian L. Zhang; M. Weinert; Katherine S. Ziemer; Philip J. Hasnip; Vlado Lazarov

doi:10.1103/PhysRevLett.107.056101

Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)

Vlado K. Lazarov, Zhuhua Cai, Kenta Yoshida, K. Honglian L. Zhang, M. Weinert, Katherine S. Ziemer, Philip J. Hasnip, Vlado Lazarov

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

Original language	English
Article number	056101
Pages (from-to)	1-5
Number of pages	5
Journal	Physical Review Letters
Volume	107
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.107.056101
Publication status	Published - 28 Jul 2011

Keywords

SURFACE
FILMS

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10.1103/PhysRevLett.107.056101

http://prl.aps.org/abstract/PRL/v107/i5/e056101

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title = "Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)",

abstract = "By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).",

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T1 - Dynamically Stabilized Growth of Polar Oxides

T2 - The Case of MgO(111)

AU - Lazarov, Vlado K.

AU - Cai, Zhuhua

AU - Yoshida, Kenta

AU - Zhang, K. Honglian L.

AU - Weinert, M.

AU - Ziemer, Katherine S.

AU - Hasnip, Philip J.

AU - Lazarov, Vlado

PY - 2011/7/28

Y1 - 2011/7/28

N2 - By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

AB - By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

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KW - FILMS

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DO - 10.1103/PhysRevLett.107.056101

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JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

M1 - 056101

ER -

Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)

Abstract

Keywords

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