Dynamically Stabilized Growth of Polar Oxides: The Case of MgO(111)

Vlado K. Lazarov, Zhuhua Cai, Kenta Yoshida, K. Honglian L. Zhang, M. Weinert, Katherine S. Ziemer, Philip J. Hasnip, Vlado Lazarov

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By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

Original languageEnglish
Article number056101
Pages (from-to)1-5
Number of pages5
JournalPhysical Review Letters
Issue number5
Publication statusPublished - 28 Jul 2011



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